Titlebook: Gallium Nitride Processing for Electronics, Sensors and Spintronics; Stephen J. Pearton,Cammy R. Abernathy,Fan Ren Book 2006 Springer-Verl

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終點(diǎn)

Advanced Processing of Gallium Nitride for Electronic Devices,e high resistivity GaN. Damage-related isolation with sheet resistances of 10. Ω/□ in n-GaN and 10. Ω/□ in p-GaN have been achieved by implanting O and transition metal elements. Effects of surface cleanliness on characteristics of GaN Schottky contacts have been investigated, and the reduction in b

終點(diǎn)

Chemical, Gas, Biological, and Pressure Sensing,lock co-polymer solutions. Pt-gated GaN Schottky diodes and Sc.O.-AlGaN-GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H.-containing ambients. Of particular interest are methods for detecting ethylene (C.H.), which offers problems because of its stro

Misnomer

Novel Insulators for Gallium Nitride Metal-Oxide Semiconductor Field Effect Transistors and AlGaN-Grrent collapse in GaN-AlGaN HEMTs. Clear evidence of inversion has been demonstrated in gatecontrolled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high-temperature implant activation anneal show a total surface state density of ～3 × 10. cm.. On HEMT

幼兒

1619-0181 ing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors..978-1-84996-965-9978-1-84628-359-8Series ISSN 1619-0181 Series E-ISSN 2365-0761

啜泣

https://doi.org/10.1007/1-84628-359-0GaN; Gallium nitride; Materials Processing; Sensors; electronics; power electronics; spintronics