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Titlebook: Gallium Nitride Processing for Electronics, Sensors and Spintronics; Stephen J. Pearton,Cammy R. Abernathy,Fan Ren Book 2006 Springer-Verl

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書(shū)目名稱(chēng)Gallium Nitride Processing for Electronics, Sensors and Spintronics
編輯Stephen J. Pearton,Cammy R. Abernathy,Fan Ren
視頻videohttp://file.papertrans.cn/381/380404/380404.mp4
概述Only book to cover current research into IV-nitrides, their processing and use in novel applications in sensors and spintronics.Includes supplementary material:
叢書(shū)名稱(chēng)Engineering Materials and Processes
圖書(shū)封面Titlebook: Gallium Nitride Processing for Electronics, Sensors and Spintronics; Stephen J. Pearton,Cammy R. Abernathy,Fan Ren Book 2006 Springer-Verl
描述.Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with?practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having?great potential...This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters, spin field effect transistors, integrated sensors and high temperature electronics...Written by three leading researchers in nitride semiconductors, the book provides an excellent introduction to gallium nitride technology and will be of interest to all reseachers and industrial practitioners wishing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors..
出版日期Book 2006
關(guān)鍵詞GaN; Gallium nitride; Materials Processing; Sensors; electronics; power electronics; spintronics
版次1
doihttps://doi.org/10.1007/1-84628-359-0
isbn_softcover978-1-84996-965-9
isbn_ebook978-1-84628-359-8Series ISSN 1619-0181 Series E-ISSN 2365-0761
issn_series 1619-0181
copyrightSpringer-Verlag London 2006
The information of publication is updating

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Advanced Processing of Gallium Nitride for Electronic Devices,e high resistivity GaN. Damage-related isolation with sheet resistances of 10. Ω/□ in n-GaN and 10. Ω/□ in p-GaN have been achieved by implanting O and transition metal elements. Effects of surface cleanliness on characteristics of GaN Schottky contacts have been investigated, and the reduction in b
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Chemical, Gas, Biological, and Pressure Sensing,lock co-polymer solutions. Pt-gated GaN Schottky diodes and Sc.O.-AlGaN-GaN metal-oxide semiconductor diodes also show large change in forward currents upon exposure to H.-containing ambients. Of particular interest are methods for detecting ethylene (C.H.), which offers problems because of its stro
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Novel Insulators for Gallium Nitride Metal-Oxide Semiconductor Field Effect Transistors and AlGaN-Grrent collapse in GaN-AlGaN HEMTs. Clear evidence of inversion has been demonstrated in gatecontrolled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high-temperature implant activation anneal show a total surface state density of ～3 × 10. cm.. On HEMT
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1619-0181 ing to keep up to date with developments that may lead to the next generation of transistors, lasers and integrated magnetic sensors..978-1-84996-965-9978-1-84628-359-8Series ISSN 1619-0181 Series E-ISSN 2365-0761
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https://doi.org/10.1007/1-84628-359-0GaN; Gallium nitride; Materials Processing; Sensors; electronics; power electronics; spintronics
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