Titlebook: Gain-Cell Embedded DRAMs for Low-Power VLSI Systems-on-Chip; Pascal Meinerzhagen,Adam Teman,Alexander Fish Book 2018 Springer Internationa

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murmur

Gain-Cell eDRAMs (GC-eDRAMs): Review of Basics and Prior Art, then provides a detailed review of the state-of-the-art of GC-eDRAM design prior to the publication of this book, identifying bitcell and peripheral circuit techniques, as well as main target applications. The review of the state-of-the-art GC-eDRAMs unveils the predominant high-performance process

irritation

Retention Time Modeling: The Key to Low-Power GC-eDRAMs,d 1-transistor-1-capacitor (1T-1C) eDRAM for reasons, such as high storage density, low bitcell leakage, logic compatibility, and suitability for two-port memories. The major drawbacks of GC-eDRAMs are their limited data retention times (RTs) and the large spread of RT across an array (Chun et al.,

archaeology

Conventional GC-eDRAMs Scaled to Near-Threshold Voltage (NTV),cuits. This chapter argues that embedded memories should follow the trend of voltage scaling to the near-.. domain in order to facilitate SoC integration. In this context, the impact of supply voltage scaling on the retention time of a conventional 2T GC-eDRAM array is analyzed, and it is further sh

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誘惑

誘惑

案發(fā)地點

Conclusions,VLSI SoCs. The presented GC-eDRAM circuits were targeted at a broad range of low-power VLSI SoCs, from ultra-low power systems operated at subthreshold (sub-..) voltages to power-aware high-performance systems operated at near-threshold (near-..) or nominal supply voltages. It was shown that the key

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撤退

Advances in Cardiac Signal Processing then provides a detailed review of the state-of-the-art of GC-eDRAM design prior to the publication of this book, identifying bitcell and peripheral circuit techniques, as well as main target applications. The review of the state-of-the-art GC-eDRAMs unveils the predominant high-performance process