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Titlebook: Emerging Technologies and Circuits; Amara Amara,Thomas Ea,Marc Belleville Book 2010 Springer Science+Business Media B.V. 2010 CMOS.FinFET.

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41#
發(fā)表于 2025-3-28 17:05:36 | 只看該作者
How Does Inverse Temperature Dependence Affect Timing Sign-Offmperature rises. Hence the device performance depends on the racing condition of electron mobility and V. together as temperature rises. Traditionally, timing is signed off at two extreme temperature corners, one representing the best case and the other representing the worst case. With ITD, the hig
42#
發(fā)表于 2025-3-28 20:51:59 | 只看該作者
CMOS Logic Gates Leakage Modeling Under Statistical Process Variations, the reverse-biased drain and source substrate junction band to band tunneling (Ibtbt), and the gate induced drain leakage (Igidl). Each of those leakage currents becomes significant in nano-scaled devices tightening the constraints of nowadays digital designs [2].
43#
發(fā)表于 2025-3-29 00:07:23 | 只看該作者
44#
發(fā)表于 2025-3-29 04:44:15 | 只看該作者
45#
發(fā)表于 2025-3-29 09:25:31 | 只看該作者
Sport-Related Structural Brain Injury,l the damage, the plasma-induced defects in Si surface layer should be quantitatively estimated, and then, plasma designs should be optimized. Defect generation probability was proposed from an optical analysis as a measure of the damage [7], on one hand. With regard to plasma design, on the other,
46#
發(fā)表于 2025-3-29 14:40:50 | 只看該作者
47#
發(fā)表于 2025-3-29 16:12:09 | 只看該作者
Pharmacology of the , Nervous Systemmperature rises. Hence the device performance depends on the racing condition of electron mobility and V. together as temperature rises. Traditionally, timing is signed off at two extreme temperature corners, one representing the best case and the other representing the worst case. With ITD, the hig
48#
發(fā)表于 2025-3-29 20:19:22 | 只看該作者
49#
發(fā)表于 2025-3-30 00:48:39 | 只看該作者
1876-1100 ues and solutions, advanced memories and analog and mixed signals. All these papers are focusing on design and technology interactions and comply with the scope of the conference.978-94-007-3353-4978-90-481-9379-0Series ISSN 1876-1100 Series E-ISSN 1876-1119
50#
發(fā)表于 2025-3-30 05:19:18 | 只看該作者
Synergy Between Design and Technology: A Key Factor in the Evolving Microelectronic Landscapeed as early as in 1965 in his visionary paper [1] A virtuous innovation circle which fuelled the exponentional growth in revenue of this industry The decoupling of process and design flows with clear interfaces and sign-offs
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