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Titlebook: Emerging Technologies and Circuits; Amara Amara,Thomas Ea,Marc Belleville Book 2010 Springer Science+Business Media B.V. 2010 CMOS.FinFET.

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書目名稱Emerging Technologies and Circuits
編輯Amara Amara,Thomas Ea,Marc Belleville
視頻videohttp://file.papertrans.cn/309/308393/308393.mp4
概述Covers different aspects of emerging technology and devices.Covers different aspects of advanced devices and circuits.Covers different aspects of reliability and SEU.Covers different aspects of power,
叢書名稱Lecture Notes in Electrical Engineering
圖書封面Titlebook: Emerging Technologies and Circuits;  Amara Amara,Thomas Ea,Marc Belleville Book 2010 Springer Science+Business Media B.V. 2010 CMOS.FinFET.
描述With the semiconductor market growth, new Integrated Circuit designs are pushing the limit of the technology and in some cases, require specific fine-tuning of certain process modules in manufacturing. Thus the communities of design and technology are increasingly intertwined. The issues that require close interactions and collaboration for trade-off and optimization across the design/device/process fields are addressed in .Emerging Technologies and Circuits.. It contains a set of outstanding papers, keynote and tutorials presented during 3 days at the International Conference On Integrated Circuit Design and Technology (ICICDT) held in June 2008 in Minatec, Grenoble. The selected papers are spread over 5 chapters covering various aspects of emerging technologies and devices, advanced circuit design, reliability, variability issues and solutions, advanced memories and analog and mixed signals. All these papers are focusing on design and technology interactions and comply with the scope of the conference.
出版日期Book 2010
關鍵詞CMOS; FinFET; Leistungsfeldeffekttransistor; SRAM;; advanced devices; analog and mixed signal; circuit des
版次1
doihttps://doi.org/10.1007/978-90-481-9379-0
isbn_softcover978-94-007-3353-4
isbn_ebook978-90-481-9379-0Series ISSN 1876-1100 Series E-ISSN 1876-1119
issn_series 1876-1100
copyrightSpringer Science+Business Media B.V. 2010
The information of publication is updating

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978-94-007-3353-4Springer Science+Business Media B.V. 2010
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Botulinum Toxin Injections for SpasticityAt the 32 nm technology node, the change from a P+ polysilicon / SiON gate stack to a P+ A-silicon/metal gate/high-K dielectric will have a significant impact on RF passives, especially the MOSCAPs and gate resistors.
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https://doi.org/10.1007/978-94-017-9576-0As the technologies scale down into the nanometer range, the transistor leakage currents become a major concern. To overcome this problem, advanced control methods are mandatory, especially for circuits such as memories.
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