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Titlebook: Emerging Memory Technologies; Design, Architecture Yuan Xie Book 2014 Springer Science+Business Media New York 2014 Emerging Memory.Memory

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41#
發(fā)表于 2025-3-28 16:10:03 | 只看該作者
42#
發(fā)表于 2025-3-28 19:59:11 | 只看該作者
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發(fā)表于 2025-3-28 23:03:18 | 只看該作者
44#
發(fā)表于 2025-3-29 03:36:48 | 只看該作者
45#
發(fā)表于 2025-3-29 11:03:16 | 只看該作者
Nationalkultur oder europ?ische Werte?icy for nonvolatile caches. . has two features: first, Swap-Shift (SwS), an enhancement based on previous main memory wear leveling to reduce cache inter-set write variations; second, probabilistic set line flush (PoLF), a novel technique to reduce cache intra-set write variations. Implementing . on
46#
發(fā)表于 2025-3-29 13:49:50 | 只看該作者
https://doi.org/10.1007/978-3-662-39719-0r, . sleep time and . wake-up time, consisting of a flip-flop controller (FFC), a distributed memory architecture and a voltage detection system. Compared with an existing industry processor, it can achieve over 30–. speedup on the wake-up/sleep time and . energy savings on the data backup and recal
47#
發(fā)表于 2025-3-29 18:06:41 | 只看該作者
A Hybrid Solid-State Storage Architecture for the Performance, Energy Consumption, and Lifetime Imp1) the PCRAM log region allows in-place updating and byte-granularity access so that it significantly improves the usage efficiency of log pages by eliminating out-of-date log records; (2) it greatly reduces the traffic of reading from the NAND flash memory storage since the size of logs loaded for
48#
發(fā)表于 2025-3-29 23:34:35 | 只看該作者
49#
發(fā)表于 2025-3-30 03:15:55 | 只看該作者
STT-RAM Cache Hierarchy Design and Exploration with Emerging Magnetic Devices,imes and write performances, made possible by novel magnetic tunneling junction (MTJ) designs. For L1 caches where speed is of the utmost importance, we propose a scheme that uses fast STT-RAM cells with reduced data retention time coupled with a dynamic refresh scheme. We will show that such a cach
50#
發(fā)表于 2025-3-30 04:20:40 | 只看該作者
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