Titlebook: Electronic Properties of Semiconductor Interfaces; Winfried M?nch Book 2004 Springer-Verlag Berlin Heidelberg 2004 Interface-induced gap s

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Informatorium voor Voeding en Di?tetiekThe energies of the optical transitions in the bulk of semiconductors are sensitive to variations in temperature and to the application of external pressure. The effects of the temperature as well as the pressure on the barrier heights of Schottky contacts are well explained by the MIGS model.

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The IFIGS-and-Electronegativity Theory,Studies of core-level photoemission revealed the partial ionic character of the covalent bonds between metal and substrate atoms on semiconductor surfaces covered with metal adatoms.

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Synthetic Energy Carriers—The Next Best Thing?sible), reliable, and should carry the lowest external costs. While biomass and solar systems can plausibly meet these criteria, coal-derived energy forms are more troublesome. Nuclear power, though it is superficially clean, may be unacceptable for reasons other than price.