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Titlebook: Electronic Properties of Semiconductor Interfaces; Winfried M?nch Book 2004 Springer-Verlag Berlin Heidelberg 2004 Interface-induced gap s

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發(fā)表于 2025-3-21 16:10:59 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Electronic Properties of Semiconductor Interfaces
編輯Winfried M?nch
視頻videohttp://file.papertrans.cn/307/306390/306390.mp4
概述Basic standard book.Important with respect to semiconductor structures.Includes supplementary material:
叢書名稱Springer Series in Surface Sciences
圖書封面Titlebook: Electronic Properties of Semiconductor Interfaces;  Winfried M?nch Book 2004 Springer-Verlag Berlin Heidelberg 2004 Interface-induced gap s
描述.Almost all semiconductor devices contain metal-semiconductor, insulator-semiconductor, insulator-metal and/or semiconductor-semiconductor interfaces; and their electronic properties determine the device characteristics. This is the first monograph that treats the electronic properties of all different types of semiconductor interfaces. Using the continuum of interface–induced gap states (IFIGS) as a unifying theme, M?nch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively. .
出版日期Book 2004
關(guān)鍵詞Interface-induced gap states; Metal-semiconductor contacts; Schottky contacts; Semiconductor heterostru
版次1
doihttps://doi.org/10.1007/978-3-662-06945-5
isbn_softcover978-3-642-05778-6
isbn_ebook978-3-662-06945-5Series ISSN 0931-5195 Series E-ISSN 2198-4743
issn_series 0931-5195
copyrightSpringer-Verlag Berlin Heidelberg 2004
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發(fā)表于 2025-3-21 21:22:47 | 只看該作者
Book 2004ing’s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively. .
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The IFIGS-and-Electronegativity Concept: Experiment and Theory,orce lowering .. Only the homogeneous barrier heights .are a reliable basis for a comparison with theoretically values Local variations of the barrier heights of real Schottky contacts on the nm-scale were directly detected by scanning ballistic-electron emission spectroscopy. The respective local B
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Informatorium voor Voeding en Di?tetiekorce lowering .. Only the homogeneous barrier heights .are a reliable basis for a comparison with theoretically values Local variations of the barrier heights of real Schottky contacts on the nm-scale were directly detected by scanning ballistic-electron emission spectroscopy. The respective local B
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Voeding bij galblaas- en leveraandoeningen, . [1988, 1990], . et al. [1994] and . et al. [1999] calculated the quasi-particle shifts of the valence-band maxima of the III–V and the II–VI compound semiconductors in the GW approximation. The quasi-particle corrections move the valence band-maxima to lower energies and, on the average, the GW c
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W.K. Visser,S. Runia,J. Tiebie,Y.F. Heerkenshe current density is then given by..where , .. and .. are the electron mobility and diffusion constant, respectively. The electric-field strength .(.) in the barrier region may be written as ...(.) = d[W.(.) ? ..]/dz, where the conduction-band bottom ..(.) is referenced to the energy position .. of the Fermi level in the metal bulk.
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