Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ay?e Erol (Faculty of Science) Book 2008 Springer-Verlag Ber

先兆

Jejune

Energetic Beam Synthesis of Dilute Nitrides and Related Alloys,re we review studies on the synthesis of group III–V dilute nitrides by a highly nonequilibrium method: the combination of ion implantation, pulsed-laser melting (PLM), and rapid thermal annealing (RTA). Using this method, the formation of a wide variety of III?N.?V. alloys including GaN.As., InN.P.

神圣將軍

Impact of Nitrogen Ion Density on the Optical and Structural Properties of MBE Grown GaInNAs/GaAs (d optical properties is presented. The growth on two different substrate orientations, GaAs (100) and (111)B has been studied. The quantum well optical emission was found to be strongly increased when the nitrogen ion density was reduced during the growth, as determined by photoluminescence experime

胰島素

顯赫的人

,Electronic Structure of GaNxAs1?x Under Pressure,ns, are performed by means of full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of applying external pressure and of varying the composition, ., are examined..The host conduction states near X and L in the Brillouin zone are modified by addition of N. Their interactio

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NEX

The Effects of Nitrogen Incorporation on Photogenerated Carrier Dynamics in Dilute Nitrides,range of electronic and optoelectronic applications. However, the addition of nitrogen also has a large impact on the carrier dynamics, often resulting in a considerable increase in shallow traps, which readily capture excitons. A number of mechanisms have been proposed to explain the creation of sh

整潔

Influence of the Growth Temperature on the Composition Fluctuations of GaInNAs/GaAs Quantum Wells,rature in this feature. For this, we have analyzed GaInNAs quantum well samples grown at different temperatures in the range 360–460°C by transmission electron microscopy in diffraction contrast mode. Our results show a variation of the contrast as bright and dark regions along the quantum well, rel

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