Titlebook: Dilute III-V Nitride Semiconductors and Material Systems; Physics and Technolo Ay?e Erol (Faculty of Science) Book 2008 Springer-Verlag Ber

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書(shū)目名稱Dilute III-V Nitride Semiconductors and Material Systems影響因子(影響力)




書(shū)目名稱Dilute III-V Nitride Semiconductors and Material Systems影響因子(影響力)學(xué)科排名




書(shū)目名稱Dilute III-V Nitride Semiconductors and Material Systems網(wǎng)絡(luò)公開(kāi)度




書(shū)目名稱Dilute III-V Nitride Semiconductors and Material Systems網(wǎng)絡(luò)公開(kāi)度學(xué)科排名




書(shū)目名稱Dilute III-V Nitride Semiconductors and Material Systems被引頻次




書(shū)目名稱Dilute III-V Nitride Semiconductors and Material Systems被引頻次學(xué)科排名




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書(shū)目名稱Dilute III-V Nitride Semiconductors and Material Systems讀者反饋




書(shū)目名稱Dilute III-V Nitride Semiconductors and Material Systems讀者反饋學(xué)科排名

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Springer Series in Materials Sciencehttp://image.papertrans.cn/e/image/280453.jpg

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https://doi.org/10.1007/978-3-540-74529-7Modulator; development; dynamics; electronic properties; electronic structure; electronics; laser; nanostru

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Analysis of GaInNAs-Based Devices: Lasers and Semiconductor Optical Amplifiers,such as material gain, differential gain, differential refractive index, and linewidth enhancement factor. The study is extended to semiconductor optical amplifiers whose basic properties are investigated and issues related to polarization insensitivity are addressed.

Sedative

Karin Weiss,Katrin Isermann,Janette Brauerre we review studies on the synthesis of group III–V dilute nitrides by a highly nonequilibrium method: the combination of ion implantation, pulsed-laser melting (PLM), and rapid thermal annealing (RTA). Using this method, the formation of a wide variety of III?N.?V. alloys including GaN.As., InN.P.

Sedative

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Sozialisation zur Mitbürgerlichkeittronegativity or low ionization energy can be explained by the band anticrossing model. Interaction between the localized levels introduced by a highly electronegative impurity, such as N in GaN.As., and the delocalized states of the host semiconductor causes a restructuring of the conduction band i

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Wieviel Autonomie besitzen Kinder?ns, are performed by means of full-potential linear muffin-tin-orbital and pseudopotential methods. The effects of applying external pressure and of varying the composition, ., are examined..The host conduction states near X and L in the Brillouin zone are modified by addition of N. Their interactio

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Sozialismus im 20. Jahrhundert,vior of conduction band effective mass as a function of Fermi energy, nitrogen content, and pressure. From analysis of the effective mass for different electron concentrations we have determined the energy dispersion relation for conduction band. We have investigated also optical absorption spectra