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Titlebook: Differentiated Layout Styles for MOSFETs; Electrical Behavior Salvador Pinillos Gimenez,Egon Henrique Salerno Ga Book 2023 The Editor(s) (

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發(fā)表于 2025-3-21 19:29:47 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Differentiated Layout Styles for MOSFETs
副標(biāo)題Electrical Behavior
編輯Salvador Pinillos Gimenez,Egon Henrique Salerno Ga
視頻videohttp://file.papertrans.cn/279/278901/278901.mp4
概述Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs.Describes innovative layout styles for MOSFETs that don’t entail an additio
圖書封面Titlebook: Differentiated Layout Styles for MOSFETs; Electrical Behavior  Salvador Pinillos Gimenez,Egon Henrique Salerno Ga Book 2023 The Editor(s) (
描述.This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die?area..
出版日期Book 2023
關(guān)鍵詞MOSFET Layout; RF CMOS ICs; High Temperature Electronics; High Temperature Effects on Semiconductors; Hi
版次1
doihttps://doi.org/10.1007/978-3-031-29086-2
isbn_softcover978-3-031-29088-6
isbn_ebook978-3-031-29086-2
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
The information of publication is updating

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沙發(fā)
發(fā)表于 2025-3-21 21:26:09 | 只看該作者
978-3-031-29088-6The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
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Ma?gorzata Przytulska,Juliusz L. KulikowskiIn this chapter, the effects of the high temperatures on the main electrical properties and characteristics of the semiconductors are presented.
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https://doi.org/10.1007/978-3-319-32229-2This chapter presents different unconventional layout styles for MOSFETs that can add new effects to their structures and boost their electrical performances and ionizing radiation tolerance. This layout technique does not add any extra cost to the current CMOS ICs manufacturing processes, it is only layout changing of the gate structure.
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發(fā)表于 2025-3-22 17:37:26 | 只看該作者
Joe Lorkowski,Vladik KreinovichThis chapter discusses the most important concepts about the ionizing radiation (harsh environment) effects in the electrical parameters and figures of merit of MOSFETs.
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發(fā)表于 2025-3-22 23:11:32 | 只看該作者
Introduction,This chapter contexts the importance of the differentiated layout styles for the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) to boost their electrical performance and ionizing radiation tolerance.
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