找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Differentiated Layout Styles for MOSFETs; Electrical Behavior Salvador Pinillos Gimenez,Egon Henrique Salerno Ga Book 2023 The Editor(s) (

[復(fù)制鏈接]
查看: 54864|回復(fù): 41
樓主
發(fā)表于 2025-3-21 19:29:47 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Differentiated Layout Styles for MOSFETs
副標(biāo)題Electrical Behavior
編輯Salvador Pinillos Gimenez,Egon Henrique Salerno Ga
視頻videohttp://file.papertrans.cn/279/278901/278901.mp4
概述Enables improved electrical performance, frequency response, energy efficiency, and die area usage of analog and RF CMOS ICs.Describes innovative layout styles for MOSFETs that don’t entail an additio
圖書封面Titlebook: Differentiated Layout Styles for MOSFETs; Electrical Behavior  Salvador Pinillos Gimenez,Egon Henrique Salerno Ga Book 2023 The Editor(s) (
描述.This book describes in detail the semiconductor physics and the effects of the high temperatures and ionizing radiations in the electrical behavior of the Metal-OxideSemiconductor Field Effect Transistors (MOSFETs), implemented with the first and second generations of the differentiated layout styles. The authors demonstrate a variety of innovative layout styles for MOSFETs, enabling readers to design analog and RF MOSFETs that operate in a high-temperature wide range and an ionizing radiation environment with high electrical performance and reduced die?area..
出版日期Book 2023
關(guān)鍵詞MOSFET Layout; RF CMOS ICs; High Temperature Electronics; High Temperature Effects on Semiconductors; Hi
版次1
doihttps://doi.org/10.1007/978-3-031-29086-2
isbn_softcover978-3-031-29088-6
isbn_ebook978-3-031-29086-2
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
The information of publication is updating

書目名稱Differentiated Layout Styles for MOSFETs影響因子(影響力)




書目名稱Differentiated Layout Styles for MOSFETs影響因子(影響力)學(xué)科排名




書目名稱Differentiated Layout Styles for MOSFETs網(wǎng)絡(luò)公開度




書目名稱Differentiated Layout Styles for MOSFETs網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Differentiated Layout Styles for MOSFETs被引頻次




書目名稱Differentiated Layout Styles for MOSFETs被引頻次學(xué)科排名




書目名稱Differentiated Layout Styles for MOSFETs年度引用




書目名稱Differentiated Layout Styles for MOSFETs年度引用學(xué)科排名




書目名稱Differentiated Layout Styles for MOSFETs讀者反饋




書目名稱Differentiated Layout Styles for MOSFETs讀者反饋學(xué)科排名




單選投票, 共有 0 人參與投票
 

0票 0%

Perfect with Aesthetics

 

0票 0%

Better Implies Difficulty

 

0票 0%

Good and Satisfactory

 

0票 0%

Adverse Performance

 

0票 0%

Disdainful Garbage

您所在的用戶組沒有投票權(quán)限
沙發(fā)
發(fā)表于 2025-3-21 21:26:09 | 只看該作者
978-3-031-29088-6The Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
板凳
發(fā)表于 2025-3-22 03:31:41 | 只看該作者
地板
發(fā)表于 2025-3-22 05:22:48 | 只看該作者
Ma?gorzata Przytulska,Juliusz L. KulikowskiIn this chapter, the effects of the high temperatures on the main electrical properties and characteristics of the semiconductors are presented.
5#
發(fā)表于 2025-3-22 11:20:46 | 只看該作者
6#
發(fā)表于 2025-3-22 15:30:07 | 只看該作者
https://doi.org/10.1007/978-3-319-32229-2This chapter presents different unconventional layout styles for MOSFETs that can add new effects to their structures and boost their electrical performances and ionizing radiation tolerance. This layout technique does not add any extra cost to the current CMOS ICs manufacturing processes, it is only layout changing of the gate structure.
7#
發(fā)表于 2025-3-22 17:37:26 | 只看該作者
Joe Lorkowski,Vladik KreinovichThis chapter discusses the most important concepts about the ionizing radiation (harsh environment) effects in the electrical parameters and figures of merit of MOSFETs.
8#
發(fā)表于 2025-3-22 23:11:32 | 只看該作者
Introduction,This chapter contexts the importance of the differentiated layout styles for the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) to boost their electrical performance and ionizing radiation tolerance.
9#
發(fā)表于 2025-3-23 05:27:42 | 只看該作者
10#
發(fā)表于 2025-3-23 05:52:12 | 只看該作者
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評(píng) 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-13 03:14
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
巨鹿县| 略阳县| 哈巴河县| 阳朔县| 湖口县| 东台市| 永州市| 渑池县| 嘉鱼县| 漳州市| 姚安县| 越西县| 阳江市| 东阿县| 泰兴市| 伊金霍洛旗| 宾阳县| 苏尼特右旗| 盱眙县| 图木舒克市| 桑植县| 勃利县| 沧州市| 荆门市| 疏勒县| 舞钢市| 新和县| 巴东县| 东源县| 大邑县| 沭阳县| 富顺县| 盐边县| 建始县| 耒阳市| 兰考县| 东明县| 防城港市| 新平| 澎湖县| 连州市|