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Titlebook: Devices Based on Low-Dimensional Semiconductor Structures; Minko Balkanski Book 1996 Kluwer Academic Publishers 1996 Exciton.Interferomete

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樓主: architect
31#
發(fā)表于 2025-3-26 22:47:29 | 只看該作者
Surface, Leaky and Singular Magnetoplasmons along the Interface of Gyrotropic Semiconductortic wave propagation in anisotropic media. The detail investigation of magnetoplasmons has been encouraged by the successful use of the hydrodynamic model to study electron layer in parabolic quantum well [1].
32#
發(fā)表于 2025-3-27 03:25:53 | 只看該作者
Optical and Theoretical Assessment of GaAs Quantum Wells Having Superlattices as Barrier Layers of SL structures as prelayers suppress the defect diffusion from the substrate to the QW and relieves the strain caused by the small lattice mismatch between GaAs and AlGaAs. Besides, a better control of the structural system parameters is possible which is important especially in the case of growt
33#
發(fā)表于 2025-3-27 09:10:50 | 只看該作者
Anisotropy of Optical Characteristics of Low-dimensional and Bulk Many-Valley Semiconductorsy bands gives rise to a number of peculiarities of optical characteristics. In this work it is shown theoretically tuperlattices depends on a light polarization. We also report about experimental observation of self - induced birefringence of intense IR light (.2 laser radiation) in bulk crystals of
34#
發(fā)表于 2025-3-27 13:27:05 | 只看該作者
35#
發(fā)表于 2025-3-27 15:28:28 | 只看該作者
Enhancement of Average Velocity of Hot Carriers in Saw-Toothed Heterostructuresimensions of electronic devices are well known. We consider some opportunities of the increase of the average velocity of ensemble of electrons in heterostructures (HS). The average velocity of electrons in semiconductors in strong field is saturated due to the scattering with emission of longitudin
36#
發(fā)表于 2025-3-27 20:48:53 | 只看該作者
Path-Integral Calculation of the Electron Density of States in Mis-Structuresm both the technological and fundamental point of view. Semiconductor device characteristics critically depend on the electronic density of states in the band gap tail region. The lack of information near the semiconductor band edges is a well known disadvantage of the experimental methods for obtai
37#
發(fā)表于 2025-3-27 22:07:14 | 只看該作者
38#
發(fā)表于 2025-3-28 04:49:36 | 只看該作者
Interferometer with Nonlinear Frequency Doubling Mirrors as Lossless All-Optical Switching Deviceerferometer with two phase conjugate mirrors has been used for measurement of both the real and theimaginary part of cubic susceptibilities [2–5] and for measurement of the fidelity of the phase conjugate process as well [6]. Mach Zehnder interferometer with nonlinear cubic media in both arms [7,8]
39#
發(fā)表于 2025-3-28 09:23:47 | 只看該作者
40#
發(fā)表于 2025-3-28 11:07:51 | 只看該作者
https://doi.org/10.1007/978-1-4899-0906-0ctures but also for applications since a voltage is applied onto any device structure, for example to control a switch (electro-optical modulator), generate a light beam (light-emitting diode, laser) or convert a light signal into an electric current (photo-detector).
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