Titlebook: Devices Based on Low-Dimensional Semiconductor Structures; Minko Balkanski Book 1996 Kluwer Academic Publishers 1996 Exciton.Interferomete

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書目名稱Devices Based on Low-Dimensional Semiconductor Structures影響因子(影響力)




書目名稱Devices Based on Low-Dimensional Semiconductor Structures影響因子(影響力)學(xué)科排名




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書目名稱Devices Based on Low-Dimensional Semiconductor Structures網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Devices Based on Low-Dimensional Semiconductor Structures被引頻次




書目名稱Devices Based on Low-Dimensional Semiconductor Structures被引頻次學(xué)科排名




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書目名稱Devices Based on Low-Dimensional Semiconductor Structures年度引用學(xué)科排名




書目名稱Devices Based on Low-Dimensional Semiconductor Structures讀者反饋




書目名稱Devices Based on Low-Dimensional Semiconductor Structures讀者反饋學(xué)科排名

影響

Hot Hole Effects in Strained Multi-Quantum-Well Heterostructures Ge/GeSited as a result of hydrostatic compression and equivalent uniaxial tension PeqUiv of Ge layers; the latter is responsible for the valence band splitting. Earlier we have observed the cyclotron resonance (CR) absorption line of high mobility light 2D holes in split valence band in Ge layers [1] and r

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多產(chǎn)魚

https://doi.org/10.1007/978-3-319-44694-3ted as a result of hydrostatic compression and equivalent uniaxial tension PeqUiv of Ge layers; the latter is responsible for the valence band splitting. Earlier we have observed the cyclotron resonance (CR) absorption line of high mobility light 2D holes in split valence band in Ge layers [1] and r

勉勵

M. J. Bishop,Elizabeth Boling,Vanessa Svihla [2]. The usage of the peculiarity of these distributions gives an opportunity to increase the average electron velocity at certain conditions. We consider for this purpose the HS with special layers intended for the stimulation of emission of LOP at assigned places. The spatially localized emission

Discrete

Discrete

Book 1996of pseudomorphic HEMTtechnology, device physics and materials layer design are presented.Each aspect is reviewed from the elementary basics up to the latestdevelopments. ..Audience:. Undergraduates in electrical engineering, graduates inphysics and engineering schools. Useful for active scientists a

有常識

脫毛

Using Gaseous Sources in Molecular Beam Epitaxy use of gaseous organometallic group IE sources in selective-area epitaxy, either by laser irradiation or on patterned substrates. Finally the use of gaseous dopant sources are described, in particular, carbon doping with halomethanes.

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