找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET; Iraj Sadegh Amiri,Hossein Mohammadi,Mahdiar Hossei Book 2019 Spring

[復制鏈接]
樓主: GRASS
21#
發(fā)表于 2025-3-25 03:52:11 | 只看該作者
22#
發(fā)表于 2025-3-25 09:04:04 | 只看該作者
Cultural Humility, a Path to Equitys related to scaling are explained. A detailed description of the origin and impact of various short-channel effects associated with downscaling and their influence on the normal operation of MOS transistors are described. The different technical solutions presented to resolve the problems caused by
23#
發(fā)表于 2025-3-25 11:56:34 | 只看該作者
24#
發(fā)表于 2025-3-25 17:48:12 | 只看該作者
Economic Growth and , in Africa parameters like dimensions of the channel, doping concentration, buried oxide thickness, and applied biases. For all three devices, the profile of surface potential and threshold voltage are plotted and discussed. The characteristics and excellence of the devices under study are investigated and co
25#
發(fā)表于 2025-3-25 21:25:52 | 只看該作者
Nokuthula Vilakazi,Sheryl L. Hendrikswe introduced and discussed the previous analytical models presented for classical SOI MESFET developed in recent years and then we offered a new exact analytical model to display the subthreshold behavior of the device. The proposed non-classical architecture presented in this study can be well ext
26#
發(fā)表于 2025-3-26 03:57:56 | 只看該作者
27#
發(fā)表于 2025-3-26 04:38:27 | 只看該作者
28#
發(fā)表于 2025-3-26 08:46:16 | 只看該作者
29#
發(fā)表于 2025-3-26 13:25:03 | 只看該作者
,Future Works on Silicon-on-Insulator Metal–Semiconductor Field Effect Transistors (SOI MESFETs),we introduced and discussed the previous analytical models presented for classical SOI MESFET developed in recent years and then we offered a new exact analytical model to display the subthreshold behavior of the device. The proposed non-classical architecture presented in this study can be well extended to partially depleted SOI MESFETs.
30#
發(fā)表于 2025-3-26 18:13:28 | 只看該作者
Invention and Evaluation of Transistors and Integrated Circuits,sistors and integrated circuits are briefly presented. After that, the concept of scaling, Moore’s law, and international technology roadmap for semiconductor (ITRS) are explained. Finally, the research objectives, the scope of the work, plan, and the outline of the book are expressed.
 關于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學 Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結 SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學 Yale Uni. Stanford Uni.
QQ|Archiver|手機版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-16 02:12
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權所有 All rights reserved
快速回復 返回頂部 返回列表
荔浦县| 汝南县| 安远县| 宿州市| 承德市| 叶城县| 广平县| 北票市| 车险| 澜沧| 高唐县| 射阳县| 漾濞| 大连市| 博客| 遵义市| 台东市| 洪洞县| 兴国县| 凌云县| 晋江市| 岗巴县| 浙江省| 大足县| 盘锦市| 奎屯市| 新安县| 深州市| 剑阁县| 高邑县| 宁都县| 旌德县| 安宁市| 平和县| 句容市| 建湖县| 开阳县| 伊金霍洛旗| 阜新| 苏州市| 都江堰市|