Titlebook: Device Physics, Modeling, Technology, and Analysis for Silicon MESFET; Iraj Sadegh Amiri,Hossein Mohammadi,Mahdiar Hossei Book 2019 Spring

GRASS

書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET影響因子(影響力)




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET影響因子(影響力)學(xué)科排名




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET網(wǎng)絡(luò)公開度




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET網(wǎng)絡(luò)公開度學(xué)科排名




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET被引頻次




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET被引頻次學(xué)科排名




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET年度引用




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET年度引用學(xué)科排名




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET讀者反饋




書目名稱Device Physics, Modeling, Technology, and Analysis for Silicon MESFET讀者反饋學(xué)科排名

掙扎

Device Physics, Modeling, Technology, and Analysis for Silicon MESFET978-3-030-04513-5

eczema

rehensive information on the structure and operation of sili.This book provides detailed and accurate information on the history, structure, operation, benefits and advanced structures of silicon MESFET, along with modeling and analysis of the device.? The authors explain the detailed physics that a

adroit

輕信

https://doi.org/10.1007/978-3-030-98507-3, we develop a modified two-dimensional analytical model for the device which is free of the problems associated with the previous models. By using the presented model, the subthreshold behavior of the device is displayed and discussed. Also, the impact of device parameters and bias conditions on the device performance is investigated.

FLINT

Analytical Investigation of Subthreshold Performance of SOI MESFET Devices,mpared with the conventional SOI MESFET. Also, the improvement in short-channel behavior of the presented devices is shown. Lastly, the TCAD simulation for each device is accomplished. The accuracy of the presented analytical models is verified by comparison with the numerical simulation results obtained by device simulator ATLAS from Silvaco.

FLINT

re important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also includes advanced structures for SOI-MESFET for submicron applications..978-3-030-04513-5

發(fā)電機

Book 2019with modeling and analysis of the device.? The authors explain the detailed physics that are important in modeling of SOI-MESFETs, and present the derivations of compact model expressions so that users can recognize the physical meaning of the model equations and parameters. The discussion also incl

強制性

,General Overview of the Basic Structure and Operation of a Typical Silicon on Insulator Metal–Semicheir influence on the normal operation of MOS transistors are described. The different technical solutions presented to resolve the problems caused by short-channel effects are discussed. Finally, the structures and advantages of non-classical devices and their feasibility in the settling of the short-channel effects are described.

背帶

Modeling of Classical SOI MESFET,, we develop a modified two-dimensional analytical model for the device which is free of the problems associated with the previous models. By using the presented model, the subthreshold behavior of the device is displayed and discussed. Also, the impact of device parameters and bias conditions on the device performance is investigated.