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Titlebook: Defects in Self-Catalysed III-V Nanowires; James A. Gott Book 2022 The Editor(s) (if applicable) and The Author(s), under exclusive licens

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樓主: Hallucination
11#
發(fā)表于 2025-3-23 12:51:07 | 只看該作者
Methods,A TEM allows for the imaging of materials down to the nm scale, using accelerated electrons and a series of electromagnetic lenses to produce a magnified image of a specimen [., .]. By control of the lenses and using different detectors, a wide range of information can be obtained from a sample using a TEM.
12#
發(fā)表于 2025-3-23 14:11:15 | 只看該作者
Interfaces in Nanowire Axial Heterostructures,Axial heterostructures have gained a great deal of attention in NWs as they are crucial building blocks for semiconducting optoelectronic devices. The unique control of the VLS growth can be used to create confined quantum systems inside NWs, and single QDs to multiple QD systems are being used for photon sources [.] and in laser applications [.].
13#
發(fā)表于 2025-3-23 21:08:23 | 只看該作者
14#
發(fā)表于 2025-3-24 00:34:58 | 只看該作者
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發(fā)表于 2025-3-24 06:16:09 | 只看該作者
16#
發(fā)表于 2025-3-24 10:17:18 | 只看該作者
Springer Theseshttp://image.papertrans.cn/d/image/264730.jpg
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發(fā)表于 2025-3-24 13:32:49 | 只看該作者
18#
發(fā)表于 2025-3-24 16:15:05 | 只看該作者
19#
發(fā)表于 2025-3-24 21:51:12 | 只看該作者
Defect Dynamics in Nanowires,t droplet consumption stage of growth. The origin of these defects is from the instability of the growth front between the crystal NW and the liquid Ga droplet as it is consumed, when the Ga flux is switched off [., .].
20#
發(fā)表于 2025-3-25 00:41:44 | 只看該作者
2190-5053 es and defects in nanowires.Showcases the defect structures This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and mac
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