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Titlebook: Defects in Self-Catalysed III-V Nanowires; James A. Gott Book 2022 The Editor(s) (if applicable) and The Author(s), under exclusive licens

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發(fā)表于 2025-3-21 17:39:02 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Defects in Self-Catalysed III-V Nanowires
編輯James A. Gott
視頻videohttp://file.papertrans.cn/265/264730/264730.mp4
概述Nominated as an outstanding PhD thesis by the University of Warwick, UK.Provides an accessible comprehensive review of semiconductor nanowires and defects in nanowires.Showcases the defect structures
叢書名稱Springer Theses
圖書封面Titlebook: Defects in Self-Catalysed III-V Nanowires;  James A. Gott Book 2022 The Editor(s) (if applicable) and The Author(s), under exclusive licens
描述This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.
出版日期Book 2022
關(guān)鍵詞Nanowires; III-V; Semiconductors; Defects; Electron Microscopy; Atomic Resolution Microscopy; In-Situ Micr
版次1
doihttps://doi.org/10.1007/978-3-030-94062-1
isbn_softcover978-3-030-94064-5
isbn_ebook978-3-030-94062-1Series ISSN 2190-5053 Series E-ISSN 2190-5061
issn_series 2190-5053
copyrightThe Editor(s) (if applicable) and The Author(s), under exclusive license to Springer Nature Switzerl
The information of publication is updating

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沙發(fā)
發(fā)表于 2025-3-21 22:32:34 | 只看該作者
The Developmental Physical Examomes from more efficient relaxation of strain and image forces from NW surfaces tending to remove dislocations, minimising NW energy. While NWs have a reputation for being less defective than their thin film and bulk counterparts, defects can and do exist.
板凳
發(fā)表于 2025-3-22 01:40:58 | 只看該作者
Accelerated Expansion Test: Japant droplet consumption stage of growth. The origin of these defects is from the instability of the growth front between the crystal NW and the liquid Ga droplet as it is consumed, when the Ga flux is switched off [., .].
地板
發(fā)表于 2025-3-22 08:02:28 | 只看該作者
Tetsuya Katayama,Kozo Mukai,Tomomi Satoitions, particularly during catalyst droplet consumption. Defects have been identified through the use of atomic resolution electron microscopy enabled by probe corrected scanning transmission electron microscope (STEM). A large variety of defect types have been observed, including familiar partial
5#
發(fā)表于 2025-3-22 10:58:39 | 只看該作者
Defects in Self-Catalysed III-V Nanowires978-3-030-94062-1Series ISSN 2190-5053 Series E-ISSN 2190-5061
6#
發(fā)表于 2025-3-22 14:06:05 | 只看該作者
Connect the Family with Community Resourcesause problems is the inability to perfectly combine mismatched material systems. Difficulty in combining different materials comes from lattice mismatch and differences in thermal expansion coefficients. These differences can generate dislocations that prevent devices from operating or make them unreliable.
7#
發(fā)表于 2025-3-22 20:46:15 | 只看該作者
The Developmental Physical Examomes from more efficient relaxation of strain and image forces from NW surfaces tending to remove dislocations, minimising NW energy. While NWs have a reputation for being less defective than their thin film and bulk counterparts, defects can and do exist.
8#
發(fā)表于 2025-3-22 23:38:14 | 只看該作者
Accelerated Expansion Test: Japant droplet consumption stage of growth. The origin of these defects is from the instability of the growth front between the crystal NW and the liquid Ga droplet as it is consumed, when the Ga flux is switched off [., .].
9#
發(fā)表于 2025-3-23 02:37:21 | 只看該作者
https://doi.org/10.1007/978-3-030-26531-1A TEM allows for the imaging of materials down to the nm scale, using accelerated electrons and a series of electromagnetic lenses to produce a magnified image of a specimen [., .]. By control of the lenses and using different detectors, a wide range of information can be obtained from a sample using a TEM.
10#
發(fā)表于 2025-3-23 08:40:58 | 只看該作者
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