Titlebook: Contemporary Trends in Semiconductor Devices; Theory, Experiment a Rupam Goswami,Rajesh Saha Book 2022 The Editor(s) (if applicable) and Th

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Lateral Straggle Parameter and Its Impact on Hetero-Stacked Source Tunnel FETf tunnel FET significantly. Using Technology Computer Aided Design (TCAD) simulations, detailed examination on the impact of variations in lateral straggling parameters (.) for a hetero-stacked source tunnel FET (HSS-TFET) is carried out. The chapter focuses on the investigation of Analog/RF figure

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Fabrication of ZnO and ZnO Heterostructures for Gas-Sensing Applicationsost active metal oxide sensing platform could be a suitable option to design microheater to achieve the required temperature with minimum power dissipation. Using nanocrystalline ZnO or its ZnO heterosructures as a sensing layer may successfully lower the operational temperature less than 300?°C pro

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Voltage-Programmed Pixel Circuit Design for AMOLED Displayswever, before the product goes to the market, the performance, yield, and lifetime of pixel circuits in particular or displays in general need to be substantially increased. Therefore, as a circuit designer, it becomes crucial to address the challenging issues of threshold voltage shift over time fo

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SELBOX TFET and DTD TFET for DC and RF/Analog Applications which is defined as kink effect. The release of cumulated holes by using a small buried oxide gap in the SELBOX device and L-patterned trench in the DTD TFET attenuates kink. The DTD device becomes more economic and reliable due to its small device area compared to body contact-based devices. The s

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1876-1100 ditionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices..978-981-16-9126-3978-981-16-9124-9Series ISSN 1876-1100 Series E-ISSN 1876-1119

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Roger W. Hendrix,John E. Johnsonnd DIBL, thus maintaining electrostatic integrity. For .?=?25?nm, the maximum ././././. at .?=?0.45?V is 0.00155 μS/4.268 fF/0.277 fF/102.09?GHz/177.57?GHz, respectively. The device works well with stress/strain/velocity saturation effects too. Various noise (diffusion/generation-recombination/flick