找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,Daeje Chin Book 1988Latest edition Kluwer Academic Publishers

[復(fù)制鏈接]
樓主: interminable
21#
發(fā)表于 2025-3-25 03:20:53 | 只看該作者
22#
發(fā)表于 2025-3-25 09:17:28 | 只看該作者
23#
發(fā)表于 2025-3-25 14:40:30 | 只看該作者
24#
發(fā)表于 2025-3-25 17:09:31 | 只看該作者
The Evolution of Communitarian Idease such a complex process is no longer desirable because of the enormous cost and turn-around time. From this point of view, computer simulation is a cost-effective alternative, not only supplying a right answer for increasingly tight processing windows, but also serving as a tool to develop future t
25#
發(fā)表于 2025-3-25 22:59:50 | 只看該作者
26#
發(fā)表于 2025-3-26 02:30:31 | 只看該作者
The Evolution of Communitarian Ideascuit performance [4.1],[4.2]. The interconnect lines not only act as loads for their drivers but also become a source of noise because the lines are capacitively coupled when they are close to each other. Also, because we scale down the widths of the lines while the lengths of the lines are generall
27#
發(fā)表于 2025-3-26 06:09:42 | 只看該作者
https://doi.org/10.1007/978-3-030-26558-8 Hewlett-Packard Laboratories. In this chapter, CAD is discussed from the user point of view. The methodology for using the simulation tools in the most effective way is presented. Then case studies will be presented in the following chapters which show in detail how simulation tools are used in dev
28#
發(fā)表于 2025-3-26 09:29:57 | 只看該作者
The Roots of Communitarian Ideas,ased process models that are currently available and suitable for computer simulation. Innumerable research hours have gone into the development of the various models and fitting parameters. However a silicon process, whether it is bipolar, NMOS, or CMOS, is an extremely complicated entity. There ar
29#
發(fā)表于 2025-3-26 13:46:53 | 只看該作者
30#
發(fā)表于 2025-3-26 19:28:07 | 只看該作者
The Giant: International Paper 1898–2000in short channel devices as the drain to source voltage is increased. Fig. 8.1 shows the measurement of the drain to source current of a short channel MOSFET’s, as a function of the drain bias, for gate bias of 0 V. Note that the current increases exponentially with drain bias. Fig. 8.2 shows the si
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點評 投稿經(jīng)驗總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-20 13:27
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
广宁县| 顺平县| 蒲江县| 汉中市| 休宁县| 藁城市| 台前县| 万盛区| 麻江县| 五家渠市| 霍山县| 建阳市| 浦江县| 湄潭县| 海南省| 夏邑县| 宜章县| 新余市| 南木林县| 普兰店市| 郎溪县| 资阳市| 玉田县| 临桂县| 东港市| 山阳县| 揭西县| 柏乡县| 万盛区| 镇巴县| 沁源县| 盐边县| 资源县| 绵竹市| 彭山县| 河池市| 宜宾县| 资源县| 龙游县| 阳原县| 谢通门县|