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Titlebook: Computer-Aided Design and VLSI Device Development; Kit Man Cham,Soo-Young Oh,Daeje Chin Book 1988Latest edition Kluwer Academic Publishers

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發(fā)表于 2025-3-21 17:38:37 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Computer-Aided Design and VLSI Device Development
編輯Kit Man Cham,Soo-Young Oh,Daeje Chin
視頻videohttp://file.papertrans.cn/235/234430/234430.mp4
叢書名稱The Springer International Series in Engineering and Computer Science
圖書封面Titlebook: Computer-Aided Design and VLSI Device Development;  Kit Man Cham,Soo-Young Oh,Daeje Chin Book 1988Latest edition Kluwer Academic Publishers
描述examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu- lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec- tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters
出版日期Book 1988Latest edition
關(guān)鍵詞CMOS; MOSFET; VLSI; computer; development; interconnect; simulation; transistor
版次2
doihttps://doi.org/10.1007/978-1-4613-1695-4
isbn_softcover978-1-4612-8956-2
isbn_ebook978-1-4613-1695-4Series ISSN 0893-3405
issn_series 0893-3405
copyrightKluwer Academic Publishers, Boston 1988
The information of publication is updating

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沙發(fā)
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板凳
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The Evolution of Complex Hunter-Gatherersfield in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. Finally, the performance, characteristic, physics and design considerations of LDD device are presented in detail.
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A Study of LDD Device Structure Using 2-D Simulationsfield in VLSI devices and the use of LDD device as a possible solution is discussed. The fabrication and simulation of LDD device is then described. Finally, the performance, characteristic, physics and design considerations of LDD device are presented in detail.
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發(fā)表于 2025-3-22 14:15:37 | 只看該作者
Emergence, Complexity and Computation can be seen. Device width will not be scaled, the current drive capability will be expressed for a fixed width. Breakdown and punchthrough voltages must be sufficiently greater than the supply voltage so that reliability is not a problem. For this example, power density is not a limitation.
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The Evolution of Communitarian Ideasmplexity and vircuit performance on a single chip is strongly motivated by the reduced cost per device and has been achieved in part by larger chop areas, but predominantly by smaller device dimensions and the clever design of devices and circuits.
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發(fā)表于 2025-3-23 04:09:42 | 只看該作者
Overviewmplexity and vircuit performance on a single chip is strongly motivated by the reduced cost per device and has been achieved in part by larger chop areas, but predominantly by smaller device dimensions and the clever design of devices and circuits.
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發(fā)表于 2025-3-23 08:53:56 | 只看該作者
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