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Titlebook: Computational Electronics; Dragica Vasileska,Stephen M. Goodnick Book 2006 Springer Nature Switzerland AG 2006

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11#
發(fā)表于 2025-3-23 11:31:45 | 只看該作者
The Drift-Diffusion Equations and Their Numerical Solution,ing. We first look at the derivation of the DD model from the BTE, and the physical significance of the parameters associated with these equations. We then look at the numerical solution of the DD equations coupled with Poisson’s equation in the domain of the semiconductor, leading to the Sharfetter
12#
發(fā)表于 2025-3-23 15:35:06 | 只看該作者
Book 2006year graduate course on computational electronics, taught now for several years, in the Electrical Engineering Department at Arizona State University. Numerous exercises and projects were derived from this course and have been included. The prerequisite knowledge is a fundamental understanding of ba
13#
發(fā)表于 2025-3-23 21:13:26 | 只看該作者
14#
發(fā)表于 2025-3-23 22:29:42 | 只看該作者
https://doi.org/10.1007/978-3-663-13008-6ing. We first look at the derivation of the DD model from the BTE, and the physical significance of the parameters associated with these equations. We then look at the numerical solution of the DD equations coupled with Poisson’s equation in the domain of the semiconductor, leading to the Sharfetter
15#
發(fā)表于 2025-3-24 03:43:46 | 只看該作者
https://doi.org/10.1007/978-3-663-13011-6cal phenomena at short dimensions occur, and limitations in material properties are reached [1]. In addition to the problems related to the understanding of actual operation of ultrasmall devices, the reduced feature sizes require more complicated and time-consuming manufacturing processes. This fac
16#
發(fā)表于 2025-3-24 07:07:27 | 只看該作者
17#
發(fā)表于 2025-3-24 14:08:57 | 只看該作者
https://doi.org/10.1007/978-3-663-13008-6iclassical description of charge transport via the Boltzmann Transport Equation (BTE) in Chapter 2. However, the direct solution of the full BTE is challenging computationally, particularly when combined with field solvers for device simulation. Therefore, for traditional semiconductor device modeli
18#
發(fā)表于 2025-3-24 15:32:05 | 只看該作者
https://doi.org/10.1007/978-3-663-13009-3it was hypothesized that the effective carrier injection velocity from the source into the channel would reach the limit of the saturation velocity and remain there as longitudinal electric fields increased beyond the onset value for velocity saturation. However, theoretical work indicated that velo
19#
發(fā)表于 2025-3-24 20:33:24 | 只看該作者
https://doi.org/10.1007/978-3-663-14874-6models, which are derived from moments of the semiclassical Boltzmann Transport Equation (BTE). As approximations to the BTE, it is expected that at some limit, such approaches become inaccurate, or fail completely. Indeed, one can envision that, as physical dimensions are reduced, at some level a c
20#
發(fā)表于 2025-3-25 03:07:46 | 只看該作者
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