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Titlebook: Computational Electronics; Dragica Vasileska,Stephen M. Goodnick Book 2006 Springer Nature Switzerland AG 2006

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書目名稱Computational Electronics
編輯Dragica Vasileska,Stephen M. Goodnick
視頻videohttp://file.papertrans.cn/233/232268/232268.mp4
叢書名稱Synthesis Lectures on Computational Electromagnetics
圖書封面Titlebook: Computational Electronics;  Dragica Vasileska,Stephen M. Goodnick Book 2006 Springer Nature Switzerland AG 2006
描述Computational Electronics is devoted to state of the art numerical techniques and physical models used in the simulation of semiconductor devices from a semi-classical perspective. Computational electronics, as a part of the general Technology Computer Aided Design (TCAD) field, has become increasingly important as the cost of semiconductor manufacturing has grown exponentially, with a concurrent need to reduce the time from design to manufacture. The motivation for this volume is the need within the modeling and simulation community for a comprehensive text which spans basic drift-diffusion modeling, through energy balance and hydrodynamic models, and finally particle based simulation. One unique feature of this book is a specific focus on numerical examples, particularly the use of commercially available software in the TCAD community. The concept for this book originated from a first year graduate course on computational electronics, taught now for several years, in the Electrical Engineering Department at Arizona State University. Numerous exercises and projects were derived from this course and have been included. The prerequisite knowledge is a fundamental understanding of ba
出版日期Book 2006
版次1
doihttps://doi.org/10.1007/978-3-031-01690-5
isbn_softcover978-3-031-00562-6
isbn_ebook978-3-031-01690-5Series ISSN 1932-1252 Series E-ISSN 1932-1716
issn_series 1932-1252
copyrightSpringer Nature Switzerland AG 2006
The information of publication is updating

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https://doi.org/10.1007/978-3-663-14874-6device region becomes important. For example, in the ultimate limit of very small geometries at low temperatures, numerous experiments over the past two decades have clearly demonstrated the individual motion of single electrons in so-called single electron transistors.
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Hydrodynamic Model,gy balance models or Monte Carlo simulation. While it was understood that velocity overshoot near the drain would not help current drive, experimental work [57, 58] claimed to observe velocity overshoot near the source, which would be beneficial and render the drift-diffusion (DD) model invalid.
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