Titlebook: Computational Electronics; Semiconductor Transp K. Hess,J. P. Leburton,U. Ravaioli Book 1991 Springer Science+Business Media Dordrecht 1991

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The Conditions of Device Simulation using Full Hydrodynamic Equationsot. In devices such as short-gate (gates of order a few tens of nanometers) MESFET’s, quantum effects such as tunneling, become important. We describe aspects of the generalization to a quantum description, and the need to use appropriate initial conditions. We have introduced an effective potential

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Cognizance

Immortal

folliculitis

Beschreibung von Steuerungsaufgaben,d numerical capabilities. It is the purpose of this paper to outline these challenges and to suggest algorithmic steps toward the development of a physically-based device simulation tool, predictive into the deep-submicron regime.

inspired

https://doi.org/10.1007/978-3-658-21885-0pendent upwind methods. For the ballistic diode (which models the channel of a MOSFET), the shock wave is fully developed in Si (with a 1 volt bias) at 300 K for a 0.1 micron channel and at 77 K for a 1.0 micron channel.

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MERIT