Titlebook: Computational Electronics; Semiconductor Transp K. Hess,J. P. Leburton,U. Ravaioli Book 1991 Springer Science+Business Media Dordrecht 1991

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Device Simulation for Silicon ULSInt of VLSI. Simulators continue to be applied in the analysis of new device concepts and have become an essential component of the technology design process [1]. As scaling continues into the ULSI realm (≤0.25μm), device simulation faces new challenges, necessitating improvements to both physical an

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Drift-Diffusion Systems: Variational Principles and Fixed Point Maps for Steady State Semiconductor om the standpoint of its decoupling fixed point map and the numerical approximate fixed point map. Variational principles will be discussed for this process and for discretizations achieved by use of generalized splines. By the choice of trial space, these capture the upwinding associated with Schar

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Drift-Diffusion Systems: Analysis of Discretized Modelstized model can be matched in a one to one fashion to solutions to the partial differential equation (pde) system. We employ the convergence of the discretizations of the single pdes in the system (which follows by standard finite element convergence theory) to obtain such a one to one matching. How

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Simulation of a Steady-State Electron Shock Wave in a Submicron Semiconductor Device Using High-Ordeion term. Thus the hydrodynamic model PDEs have hyperbolic, parabolic, and elliptic modes..The nonlinear hyperbolic modes support shock waves. Numerical sim-ulations of a steady-state electron shock wave in a semiconductor device are presented, using steady-state second upwind and high-order time-de

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Adaptive Grids for Semiconductor Modellingrocess and device simulation. The procedures permit accurate realization of steep layers in the solution that frequently arise in these applications. Both two- and three-dimensional formulations are considered together with the associated quad-tree and oct-tree data structures. An element-by-element

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A Numerical Large Signal Model for the Heterojunction Bipolar Transistor temperature model which includes velocity overshoot and carrier energy effects has been developed. As an example of the model’s effectiveness, an HBT embedded in a simple circuit is simulated. Comparisons between DC and RF results are made.

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