Titlebook: Circuit and Interconnect Design for RF and High Bit-rate Applications; Hugo Veenstra,John R. Long Book 20081st edition Springer Science+Bu

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https://doi.org/10.1007/978-1-4020-6884-3Avalanche Multiplication; CMOS; Circuit Design; Cross-Connect Switch; Device Metrics; Distributed Capacit

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978-90-481-7750-9Springer Science+Business Media B.V. 2008

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Thailand in the Regional Division of Labourcan be increased by employing double emitter followers in the RF signal path. However, to be able to do so, the supply voltage must be increased to a value above the collector-emitter breakdown voltage (BVCEO) of the high-speed transistors of the technology.

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Bias Circuits Tolerating Output Voltages Above BVCEO,can be increased by employing double emitter followers in the RF signal path. However, to be able to do so, the supply voltage must be increased to a value above the collector-emitter breakdown voltage (BVCEO) of the high-speed transistors of the technology.

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Circuit and Interconnect Design for RF and High Bit-rate Applications

anesthesia

Book 20081st editionthe effects of interconnections as soon as estimated interconnect lengths are available. Application of interconnect design is illustrated using a 12.5 Gb/s crosspoint switch example taken from a volume production part.