Titlebook: Applied Scanning Probe Methods I; Bharat Bhushan,Harald Fuchs,Sumio Hosaka Book 2004 Springer-Verlag Berlin Heidelberg 2004 AFM.Material S

省略

Tip Characterization for Dimensional Nanometrologyeuticals and other biological or medical applications) the nanometer size scale is determined by the fact that function is driven by chemistry, and the size scale is therefore that of molecules. In other cases (semiconductor electronics, data storage) sizes of components are driven to the smallest m

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異常

Visualization of Polymer Structures with Atomic Force Microscopynd atomic force microscopy (AFM) [1, 2]. In STM, tunneling current between a sharp metallic probe placed in close proximity to a conducting surface is used as a probing interaction. Tunneling current in the range of nanoamperes originates when a bias voltage is applied between this probe and the con

Aphorism

Displacement and Strain Field Measurements from SPM Images reliability. Besides accelerated testing of products and components and numerical finite element analysis, mainly deformation measurement methods are looked for. They allow us to understand response of components to environmental and functional thermo-mechanical loading and are part of advanced rel

Obvious

AFM Characterization of Semiconductor Line Edge Roughness as semiconductor chips and micro-optics. One of the key measurands is the linewidth of semiconductor features [1]. A class of AFM instruments often called CD-AFM has been developed for the purpose of measuring linewidth accurately (Fig. 9.1). The smallest linewidth or hole diameter on a semiconduct

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庇護(hù)

SPM Manipulation and Modifications and Their Storage Applicationsmodify a sample surface. This means that as previous microscope technology such as optical and electron microscopes has been applied to fabricate fine patterns for VLSI devices and storage devices, an application of the SPM technology to fabricate them with atomic and nanometer size can also be expe

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