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Titlebook: Alternative Lithography; Unleashing the Poten Clivia M. Sotomayor Torres Book 2003 Springer Science+Business Media New York 2003 electronic

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樓主: 母牛膽小鬼
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發(fā)表于 2025-3-23 11:58:53 | 只看該作者
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1571-5744 r, that there was no point to investigate only alternative devices to CMOS, but what was really needed was an integrated approach that took into account more fa978-1-4613-4836-8978-1-4419-9204-8Series ISSN 1571-5744 Series E-ISSN 2197-7976
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發(fā)表于 2025-3-24 05:11:00 | 只看該作者
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https://doi.org/10.1007/978-3-540-44736-8ct with the substrate thus transferring the ink from the stamp to the surface at the contacted areas only. The ink forms a self-assembled monolayer (SAM) at these areas. This leaves a patterned surface on which the master patterns have been replicated.
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發(fā)表于 2025-3-24 14:21:01 | 只看該作者
https://doi.org/10.1007/978-3-540-44736-8s are suitable for the development of a scanning probe-based lithography. Ultra high vacuum requirements, low temperatures or unreliable pattern definition mod-ification considerably the number of methods suitable for lithographic purposes. In this context lithography means a method for large scale patterning of surfaces and device fabrication.
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發(fā)表于 2025-3-24 15:18:08 | 只看該作者
https://doi.org/10.1007/978-3-540-44736-8Roadmap for Semiconductors (ITRS) sub 100 nm patterning is a great demand for next generation lithography (NGL). Advanced technologies, such as extreme ultraviolet lithography (EUV), X-ray lithography (XRL), electron projection lithography (EPL), and ion projection lithography (IPL) are pushing towards into the domain of 35 nm..
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