Titlebook: Ageing of Integrated Circuits; Causes, Effects and Basel Halak Book 2020 Springer Nature Switzerland AG 2020 Analog IC Reliability.Aging E

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Ageing Mitigation Techniques for SRAM Memoriesents of digital circuits is crucial, in particular, in static random-access memory (SRAM) as it is always subject to ageing for whatever value is stored in an SRAM cell. Moreover, the prolonged storage of the same bit patterns in an SRAM can cause asymmetric NBTI stress, which is manifested by the t

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Ageing-Aware Logic SynthesisI effect increases signal delays, eventually leading to timing violations. Due to the increased demand for circuit density, logic synthesis is currently a significant EDA process to design a circuit with many millions of transistors. Traditional synthesis process does not specifically consider the a

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On-Chip Ageing Monitoring and System Adaptationand performance monitors have become necessary for adaptive compensation schemes. This chapter presents up-to-date state-of-the-art performance and reliability monitors, insertion methodology and experimental results of different monitors used for process and environment variations as well as ageing

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Aging Monitors for SRAM Memory Cells and Sense Amplifierso various aging mechanisms. Bias temperature instability (BTI) and hot carrier injection (HCI) phenomena are highly accused of the aging-related reliability reduction. This degradation is getting worse under excess stress conditions (high operating temperature and voltage levels). Aging phenomena si

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A Cost-Efficient Aging Sensor Based on Multiple Paths Delay Fault MonitoringS device will degrade significantly over time and, therefore, results in the delay faults. In situ delay fault monitoring schemes have been proposed to ensure the reliability of an IC during its lifetime. Such schemes are usually based on the application of ageing sensors to predict ageing-induced f

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https://doi.org/10.1007/978-3-030-23781-3Analog IC Reliability; Aging Effects on Integrated Circuits; Aging-effects Mitigation in processor arc

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978-3-030-23783-7Springer Nature Switzerland AG 2020

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yasser elhariry,Edwige Tamalet Talbayevts the unwanted but unavoidable oxide defects leading to charge traps and presents activation mechanisms. These defects can lead to a variety of known ageing effects, such as negative/positive bias instability, hot carrier degradation (alias hot carrier injection), random telegraph noise and time-de