Titlebook: Festk?rperprobleme 24; P. Grosse Book 1984 Springer-Verlag Berlin Heidelberg 1984 Elektron.Halbleiter.Phasenübergang.Polymer.Streuung.Wass

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Chalcogens as point defects in silicon,doped Si in addition to isolated, probably substitutional, atoms. The tendency to form point-defect complexes increases from Te to O with increasing electronegativity and decreasing tetrahedral atomic radii. This tendency culminates for oxygen which may form a series of high-order complexes (“therma