Titlebook: Festk?rperprobleme 24; P. Grosse Book 1984 Springer-Verlag Berlin Heidelberg 1984 Elektron.Halbleiter.Phasenübergang.Polymer.Streuung.Wass

Cocker

搖曳的微光

宿醉

Inelastic electron tunneling spectroscopy,amples, investigations by IETS on sublimated phthalocyanine dye molecules, on ultrahigh vacuum prepared Al/Al oxide/Pb tunnel junctions and on protonirradiated Al/Al oxide+HCOO./Pb tunnel junctions are reviewed. Tunneling measurements performed on n-Si/SiO./metal structures with very thin SiO. layers are reported and the results are discussed.

Enervate

Miniature refrigerators for cryoelectronic sensors,c interference signals, mechanical vibrations, and long maintenance free operation periods. Two cryocoolers, which are presently being further developed are discussed in some detail: A miniature Joule-Thomson and a small Stirling cryocooler.

傳染

Lattice distortion, elastic interaction, and phase transitions of hydrogen in metals,scopic density modes..X-ray and neutron scattering methods were used to get information on lattice distortions, elastic interaction, and the hydrogen density modes..After an introduction to the scattering, methods and outline of the physical concepts for phase transitions of hydrogen in metals recent experimental results are presented.

institute

Optimum

High-speed homo- and heterostructure field-effect transistors,nfluence of the better transport properties of heterostructures (as compared to homostructures) is discussed. Finally the consequences of higher device speed on integrated circuit performance are demonstrated using a simple circuit example.

collagen

Defiance

Lecture Notes in Computer Scienceration of the phenomenon in a solid has been supplied for two simple point defects in crystalline silicon—the lattice vacancy and interstitial boron. The experiments leading to this identification are described and mechanisms for this remarkable phenomenon are discussed.

壓倒

Springer Topics in Signal Processinguctor heterostructures is studied “in situ” for the GaAs/Ge system. Electronic Raman scattering is used widely to investigate subband energies and carrier concentrations in space charge layers at semiconductor interfaces as well as in superlattices.