找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies; Michael Fulde Book 2010 Springer Science+

[復(fù)制鏈接]
樓主: 歸納
21#
發(fā)表于 2025-3-25 03:36:42 | 只看該作者
1437-0387 assessment in multi-gate CMOS.Close link to device and tech.Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promisin
22#
發(fā)表于 2025-3-25 09:51:13 | 只看該作者
23#
發(fā)表于 2025-3-25 14:47:02 | 只看該作者
Analog Properties of Multi-Gate MOSFETs, impact of high-k dielectrics is also covered. The objective is to close the link from technology and integration aspects to analog device performance. The associated trade-offs are outlined. On device level, the reduction of short channel effects is a major advantage of fully depleted multi-gate de
24#
發(fā)表于 2025-3-25 19:50:41 | 只看該作者
25#
發(fā)表于 2025-3-25 22:02:26 | 只看該作者
26#
發(fā)表于 2025-3-26 02:23:06 | 只看該作者
Multi-Gate Tunneling FETs,look to analog design aspects beyond CMOS. Analog design considerations are derived from basic device performance, temperature and matching behavior. Although multi-gate tunneling FETs (MuGTFETs) feature low on-currents, promising analog properties and low variability regarding temperature and thres
27#
發(fā)表于 2025-3-26 06:46:31 | 只看該作者
Book 2010 concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented a
28#
發(fā)表于 2025-3-26 11:07:31 | 只看該作者
29#
發(fā)表于 2025-3-26 13:14:05 | 只看該作者
1437-0387 ulti-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies..978-94-007-3083-0978-90-481-3280-5Series ISSN 1437-0387 Series E-ISSN 2197-6643
30#
發(fā)表于 2025-3-26 17:49:20 | 只看該作者
Analog Properties of Multi-Gate MOSFETs,vices, resulting in beneficial output impedance, gain and matching behavior. Serious concerns related to high-k dielectrics are pronounced flicker noise and dynamic threshold voltage variations or hysteresis effects. A?novel model of this new hysteresis effects suitable for analog circuit simulation is derived and verified with measurements.
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-5 21:39
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
闽清县| 宁强县| 同心县| 上高县| 衡阳市| 梅州市| 泸水县| 兴山县| 高密市| 赣榆县| 苗栗县| 恩施市| 绥中县| 民和| 屏东市| 两当县| 钟祥市| 井研县| 姜堰市| 永宁县| 安陆市| 玛沁县| 新巴尔虎右旗| 阳朔县| 锦州市| 泾阳县| 衢州市| 林周县| 斗六市| 屏东县| 五峰| 安平县| 天长市| 开江县| 称多县| 博乐市| 武清区| 克什克腾旗| 中牟县| 定日县| 临汾市|