Titlebook: Vapor Crystal Growth and Characterization; ZnSe and Related II– Ching-Hua Su Book 2020 Springer Nature Switzerland AG 2020 Physical Vapor T

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書目名稱Vapor Crystal Growth and Characterization影響因子(影響力)




書目名稱Vapor Crystal Growth and Characterization影響因子(影響力)學科排名




書目名稱Vapor Crystal Growth and Characterization網(wǎng)絡公開度




書目名稱Vapor Crystal Growth and Characterization網(wǎng)絡公開度學科排名




書目名稱Vapor Crystal Growth and Characterization被引頻次




書目名稱Vapor Crystal Growth and Characterization被引頻次學科排名




書目名稱Vapor Crystal Growth and Characterization年度引用




書目名稱Vapor Crystal Growth and Characterization年度引用學科排名




書目名稱Vapor Crystal Growth and Characterization讀者反饋




書目名稱Vapor Crystal Growth and Characterization讀者反饋學科排名

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and cons of crystal growth by physical vapor transport.Repo.The book describes developments in the crystal growth of bulk II-VI semiconductor materials. A fundamental, systematic, and in-depth study of the physical vapor transport (PVT) growth process is the key to producing high-quality single cry

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Introduction,ounds, such as ZnSe, ZnS, ZnTe, CdS and CdSe and their solid solutions, which are expected to be the vital materials for high-performance optoelectronics devices such as light-emitting diodes (LEDs) and laser diodes operating in the blue spectrum and ultraviolet detectors. Compounds of the group II–

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Residual Gas Measurements and Morphology Characterization on Grown Crystals,which included the residual gas measurements on selected ampoules and the studies on the morphology of the grown crystals, are presented in this chapter. The residual gas pressures and compositions measured after growths with the source materials from different vendors suggested that the H. reductio

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Measurements on Thermal and Electrical Properties and Characterizations on Annealed Samples,ties of the materials. The recent advancements in the converting efficiency of thermoelectrics have been attributed to the modification on material inhomogeneity of microstructures by hot pressing or simply cooling the melt to reduce the thermal conductivity. On the other hand, due to its time-consu

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Two-Dimensional and Three-Dimensional Numerical Simulation of Vapor Transport Process,nd associated boundary conditions. Both the incompressible Boussinesq approximation and a compressible model are tested to determine the influence of the thermal environments, the residual gas pressure as well as the gravity direction and magnitude on the process and to discern the differences betwe