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Titlebook: VLSI Memory Chip Design; Kiyoo Itoh Book 2001 Springer-Verlag Berlin Heidelberg 2001 DRAM.Dram design and technology.High signal-to-noise

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發(fā)表于 2025-3-21 18:26:40 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書(shū)目名稱VLSI Memory Chip Design
編輯Kiyoo Itoh
視頻videohttp://file.papertrans.cn/981/980095/980095.mp4
概述This book is based on the author‘s 30-year design career in industry.It includes more than 400 figures.Includes supplementary material:
叢書(shū)名稱Springer Series in Advanced Microelectronics
圖書(shū)封面Titlebook: VLSI Memory Chip Design;  Kiyoo Itoh Book 2001 Springer-Verlag Berlin Heidelberg 2001 DRAM.Dram design and technology.High signal-to-noise
描述The VLSI memory era truly began when the first production of semiconduc- tor memory was announced by IBM and Intel in 1970. The announcement had a profound impact on my research at Hitachi Ltd. , and I was forced to change fields: from magnetic thin film to semiconductor memory. This change was so exceptionally sudden and difficult, I feIt like a victim of fate. Looking back, however, I realize how fortunate I was. I have witnessed an unprecedented increase in memory capacity (DRAM, for example, has had a 6-order increase in the last three decades - from the 1-Kb level in 1970 to the 1-Gb level today). I have contributed to this progress with full involvement in memory-chip development over my career. Such rapid progress would have been impossible without many of the inventions and innovative technologies, and without the effort of many talented people. Unfortunately, few systematic books on memory-chip design have been written by experts. Tliis is a result of two factors: the difficulty of involving university professors because of rapidly changing technology requiring huge investments and development resources, and a shortage of time on the part of chip designers in industry due
出版日期Book 2001
關(guān)鍵詞DRAM; Dram design and technology; High signal-to-noise cell and array designs; High-speed subsystem mem
版次1
doihttps://doi.org/10.1007/978-3-662-04478-0
isbn_softcover978-3-642-08736-3
isbn_ebook978-3-662-04478-0Series ISSN 1437-0387 Series E-ISSN 2197-6643
issn_series 1437-0387
copyrightSpringer-Verlag Berlin Heidelberg 2001
The information of publication is updating

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發(fā)表于 2025-3-21 21:16:36 | 只看該作者
Kiyoo Itohvironmental and social effects associated with agency actions—for all programmes or proposals which might have a significant effect on the environment. Finally the Act established a President’s Council on Environmental Quality, an independent reviewing agency, to oversee and publicize all EISs. Subs
板凳
發(fā)表于 2025-3-22 01:40:57 | 只看該作者
Kiyoo Itohmitment is always going to appear as being to Korea’s advantage. However, Korea’s increasing proaction in strategically using soft-power resources and positioning in this particular green growth issue sphere also requires a measure of state-led soft-power credibility Yet with such credibility also e
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發(fā)表于 2025-3-22 08:04:40 | 只看該作者
Kiyoo Itohnded rapidly during the past two decades as the result of increasing collaboration between behav- ioral and social scientists, environmental designers, and professional plan- ners. During this period, alternative conceptual and methodological ap- proaches to environmental simulation have emerged, and numerous978-1-4899-1142-1978-1-4899-1140-7
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Kiyoo Itoh temperature, steam pressure, wind speed, precipitation and barometric pressure turned out to be partly interaction effects, partly main effects of emotional stability and extroversion. Only interdisciplinary cooperation in studying the physiological and psychological processess causing the influenc
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發(fā)表于 2025-3-22 13:43:55 | 只看該作者
ons of maps, graphs, contours, and animations of model outputs in 2 and 3 dimensions. Examples are presented of the various data analysis and visualization techniques being used within the Great Lakes for providing essential knowledge on the fate and effects of Tier 1 and Tier II toxic chemicals.
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High Signal-to-Noise Ratio DRAM Design and Technology,s. The development of higher-permittivity materials for capacitor dielectric films, while keeping the fabrication process as simple as possible, and the suppression of the random design-parameter variations of MOSFETs, which are prominent below 0.1 μm, are good examples. However, it will be more dif
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