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Titlebook: Ultra-Low Voltage Nano-Scale Memories; Kiyoo Itoh,Masashi Horiguchi,Hitoshi Tanaka Book 2007 Springer-Verlag US 2007 DRAM.Generator.LSI.SR

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發(fā)表于 2025-3-21 18:25:03 | 只看該作者 |倒序?yàn)g覽 |閱讀模式
書目名稱Ultra-Low Voltage Nano-Scale Memories
編輯Kiyoo Itoh,Masashi Horiguchi,Hitoshi Tanaka
視頻videohttp://file.papertrans.cn/941/940416/940416.mp4
概述Discusses the emerging problems between the device, circuit, and system levels in terms of reliable high-speed operations of memory cells and peripheral logic circuits.Presents the essential differenc
叢書名稱Integrated Circuits and Systems
圖書封面Titlebook: Ultra-Low Voltage Nano-Scale Memories;  Kiyoo Itoh,Masashi Horiguchi,Hitoshi Tanaka Book 2007 Springer-Verlag US 2007 DRAM.Generator.LSI.SR
描述..Ultra-Low Voltage Nano-Scale Memories. provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, and system levels are systematically covered in terms of reliable high-speed operations of memory cells and peripheral logic circuits. The effectiveness of solutions at device and circuit levels is also described at length through clarifying noise components in an array, and even essential differences in ultra-low voltage operations between DRAMs and SRAMs. Moreover, various kinds of on-chip voltage converters necessary to solve problems with internal power-supply managements are extensively discussed. This authoritative monograph addresses these design challenges for memory and circuit engineers as well as for researchers and students who are interested in ultra-low voltage nano-scale memory LSIs..
出版日期Book 2007
關(guān)鍵詞DRAM; Generator; LSI; SRAM; Signal; analog; circuit; circuit design; high voltage; integrated circuit; logic; m
版次1
doihttps://doi.org/10.1007/978-0-387-68853-4
isbn_softcover978-1-4419-4124-4
isbn_ebook978-0-387-68853-4Series ISSN 1558-9412 Series E-ISSN 1558-9420
issn_series 1558-9412
copyrightSpringer-Verlag US 2007
The information of publication is updating

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發(fā)表于 2025-3-21 20:50:08 | 只看該作者
https://doi.org/10.1007/978-0-387-68853-4DRAM; Generator; LSI; SRAM; Signal; analog; circuit; circuit design; high voltage; integrated circuit; logic; m
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Ultra-Low Voltage Nano-Scale Memories978-0-387-68853-4Series ISSN 1558-9412 Series E-ISSN 1558-9420
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發(fā)表于 2025-3-22 14:38:50 | 只看該作者
1558-9412 d peripheral logic circuits.Presents the essential differenc..Ultra-Low Voltage Nano-Scale Memories. provides an in-depth discussion of the state-of-the-art nanometer and sub-1-V memory LSIs that are playing decisive roles in power conscious systems. Emerging problems between the device, circuit, an
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without outside guidance. It is based on !he Prpgramming ~angyage e~ (Bev1sed B~) [1]--the basic definition of Pascal and concise reference manual for the experienced Pascal programmer. The linear structure of a book is by no means ideal for introducing a language, whether it be a formal or natural
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發(fā)表于 2025-3-23 06:53:10 | 只看該作者
Kiyoo Itoh,Masashi Horiguchi,Hitoshi TanakaJune 1980. It was designed to appeal to a new (in 1979) sort of reader the microcomputer enthusiast, both amateur and professional about whom two assumptions were made. The first was that the reader was someone who had already learned to program (probably in BASIC) and who wanted to create programs
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