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Titlebook: UV Solid-State Light Emitters and Detectors; Michael S. Shur,Artūras ?ukauskas Conference proceedings 2004 Springer Science+Business Media

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書目名稱UV Solid-State Light Emitters and Detectors
編輯Michael S. Shur,Artūras ?ukauskas
視頻videohttp://file.papertrans.cn/941/940176/940176.mp4
叢書名稱NATO Science Series II: Mathematics, Physics and Chemistry
圖書封面Titlebook: UV Solid-State Light Emitters and Detectors;  Michael S. Shur,Artūras ?ukauskas Conference proceedings 2004 Springer Science+Business Media
描述Infrared and visible light LEDs and photodetectors have found numerous applications and have become a truly enabling technology. The promise of solid state lighting has invigorated interest in white light LEDs. Ultraviolet LEDs and solar blind photodetectors represent the next frontier in solid state emitters and hold promise for many important applications in biology, medi- cine, dentistry, solid state lighting, displays, dense data storage, and semi- conductor manufacturing. One of the most important applications is in sys- tems for the identification of hazardous biological agents. Compared to UV lamps, UV LEDs have lower power consumption, a longer life, compactness, and sharper spectral lines. UV LEDs can provide a variety of UV spectra and have shape and form factor flexibility and rugged- ness. Using conventional phosphors, UV LEDs can generate white light with high CRI and high efficiency. If quantum cutter phosphors are developed, white light generation by UV LEDs might become even more efficient. Advances in semiconductor materials and in improved light extraction techniques led to the development of a new generation of efficient and pow- erful visible high-brightness LED
出版日期Conference proceedings 2004
關鍵詞LED; Laser; Sensor; alloy; optoelectronics; polymer; semiconductor; spectroscopy
版次1
doihttps://doi.org/10.1007/978-1-4020-2103-9
isbn_softcover978-1-4020-2035-3
isbn_ebook978-1-4020-2103-9Series ISSN 1568-2609
issn_series 1568-2609
copyrightSpringer Science+Business Media Dordrecht 2004
The information of publication is updating

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UV Metal Semiconductor Metal Detectors,lications require that UV detectors have a huge dynamic response between UV and the visible, and a very low dark current in the range of the UV flux measured. (Al,Ga)N alloys present a large direct bandgap in this range and therefore can be used as an active region in such detectors. To take advanta
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Characterization of Advanced Materials for Optoelectronics by Using UV Lasers and Four-Wave Mixing ructures are presented. Carrier plasma parameters, such as carrier lifetimes and bipolar/monopolar diffusion coefficients as well as surface recombination velocities in heterostructures of GaN/sapphire, InGaN/GaN, CdTe/GaAs, ZnTe homoepitaxial structures, and heavily doped .-GaAs double heterostruct
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Quantum Phospors,es environmental problems and causes an undesired delay in lamp startup. If mercury is replaced by xenon, which is already gaseous at room temperature and harmless to the environment, both problems are solved. Xenon however emits at higher energy (.. = 172 nm) and the phosphors used in mercurybased
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Novel Algan Heterostructures for UV Sensors and Leds,row-band UV sensors. Epitaxial heterostructures of n-type A1N on p-type diamond were grown by MBE and exhibit surprisingly good electronic properties, suggesting a possible application for future UV light-emitting diodes. Finally, the use of AlGaN/GaN heterostructures for biosensors is briefly discu
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