| 書目名稱 | Towards the First Silicon Laser | | 編輯 | Lorenzo Pavesi,Sergey Gaponenko,Luca Negro | | 視頻video | http://file.papertrans.cn/928/927204/927204.mp4 | | 叢書名稱 | NATO Science Series II: Mathematics, Physics and Chemistry | | 圖書封面 |  | | 描述 | Silicon, the leading material in microelectronics during the last four decades, also promises to be the key material in the future. Despite many claims that silicon technology has reached fundamental limits, the performance of silicon microelectronics continues to improve steadily. The same holds for almost all the applications for which Si was considered to be unsuitable. The main exception to this positive trend is the silicon laser, which has not been demonstrated to date. The main reason for this comes from a fundamental limitation related to the indirect nature of the Si band-gap. In the recent past, many different approaches have been taken to achieve this goal: dislocated silicon, extremely pure silicon, silicon nanocrystals, porous silicon, Er doped Si-Ge, SiGe alloys and multiquantum wells, SiGe quantum dots, SiGe quantum cascade structures, shallow impurity centers in silicon and Er doped silicon. All of these are abundantly illustrated in the present book. | | 出版日期 | Book 2003 | | 關(guān)鍵詞 | LED; Laser; Transistor; alloy; crystal; modeling; nanoparticle; photonics; quantum dot; spectroscopy | | 版次 | 1 | | doi | https://doi.org/10.1007/978-94-010-0149-6 | | isbn_softcover | 978-1-4020-1194-8 | | isbn_ebook | 978-94-010-0149-6Series ISSN 1568-2609 | | issn_series | 1568-2609 | | copyright | Springer Science+Business Media Dordrecht 2003 |
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