| 書(shū)目名稱 | The Physics of Submicron Semiconductor Devices |
| 編輯 | Harold L. Grubin,David K. Ferry,C. Jacoboni |
| 視頻video | http://file.papertrans.cn/917/916523/916523.mp4 |
| 叢書(shū)名稱 | NATO Science Series B: |
| 圖書(shū)封面 |  |
| 描述 | The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. |
| 出版日期 | Book 1988 |
| 關(guān)鍵詞 | Semiconductor; integrated circuit; material; micro-alloy transistor; physics; transistor |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-1-4899-2382-0 |
| isbn_softcover | 978-1-4899-2384-4 |
| isbn_ebook | 978-1-4899-2382-0Series ISSN 0258-1221 |
| issn_series | 0258-1221 |
| copyright | Springer Science+Business Media New York 1988 |
|Archiver|手機(jī)版|小黑屋|
派博傳思國(guó)際
( 京公網(wǎng)安備110108008328)
GMT+8, 2025-10-5 09:06
發(fā)表于 2025-3-21 18:26:15
