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Titlebook: The Physics and Chemistry of SiO2 and the Si-SiO2 Interface; C. Robert Helms,Bruce E. Deal Book 1988 Springer Science+Business Media New Y

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書目名稱The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
編輯C. Robert Helms,Bruce E. Deal
視頻videohttp://file.papertrans.cn/917/916440/916440.mp4
圖書封面Titlebook: The Physics and Chemistry of SiO2 and the Si-SiO2 Interface;  C. Robert Helms,Bruce E. Deal Book 1988 Springer Science+Business Media New Y
描述The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has be
出版日期Book 1988
關(guān)鍵詞Hochfrequenz; MOSFET; materials science; model; modeling; photoelektrochemische Zelle; semiconductor devic
版次1
doihttps://doi.org/10.1007/978-1-4899-0774-5
isbn_softcover978-1-4899-0776-9
isbn_ebook978-1-4899-0774-5
copyrightSpringer Science+Business Media New York 1988
The information of publication is updating

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The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
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Book 1988ly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has be
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Book 1988Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they oft
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een built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even thoug
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