找回密碼
 To register

QQ登錄

只需一步,快速開始

掃一掃,訪問微社區(qū)

打印 上一主題 下一主題

Titlebook: Sustainable Development of Multifunctional Landscapes; Katharina Helming,Hubert Wiggering Book 2003 Springer-Verlag Berlin Heidelberg 2003

[復(fù)制鏈接]
樓主: Eschew
41#
發(fā)表于 2025-3-28 16:16:58 | 只看該作者
Marek Degórski cavity QED started in the weak-coupling regime [49] and then entered the strong-coupling regime, where the exciton-photon coupling constant becomes larger than the exciton and cavity photon decay rates [50>]. In a high-. semiconductor microcavity, the strong exciton-photon coupling leads to the for
42#
發(fā)表于 2025-3-28 18:53:42 | 只看該作者
Zbyněk Ul?ák,Ji?í PallThe purpose here is not only to familiarise the reader with the modes of operation but also to point out the limitations of the simple theories. Nevertheless, even with these limitations, the analytical models outlined in this chapter have played a vital role in the development of semiconductor devi
43#
發(fā)表于 2025-3-28 23:07:29 | 只看該作者
Heinrich F. J. Wohlmeyeres involved in device and electronic circuit design and develop- ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor- ary designs. The cha
44#
發(fā)表于 2025-3-29 05:58:05 | 只看該作者
45#
發(fā)表于 2025-3-29 08:18:27 | 只看該作者
46#
發(fā)表于 2025-3-29 12:36:51 | 只看該作者
József ángyán,Katalin Balázs,László Podmaniczky,Julianna Skutaials, scaling, heterostructures and new device concepts. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the nitride based
47#
發(fā)表于 2025-3-29 18:22:28 | 只看該作者
48#
發(fā)表于 2025-3-29 22:10:13 | 只看該作者
ülo Mander,Evelyn Koduvereals, scaling, heterostructures and new device concepts. Semiconductor devices have mostly relied on Si but increasingly GaAs, InGaAs and heterostructures made from Si/SiGe, GaAs/AlGaAs etc have become important. Over the last few years one of the most exciting new entries has been the nitride based
49#
發(fā)表于 2025-3-30 02:05:18 | 只看該作者
Michael Glemnitz,Angelika Wurbspidly becoming dominant such as GaN and SiGe.The Book treats.Semiconductor Device Physics and Design.?provides a fresh and unique teaching tool. Over the last decade device performances are driven by new materials, scaling, heterostructures and new device concepts. Semiconductor devices have mostly
50#
發(fā)表于 2025-3-30 06:05:11 | 只看該作者
 關(guān)于派博傳思  派博傳思旗下網(wǎng)站  友情鏈接
派博傳思介紹 公司地理位置 論文服務(wù)流程 影響因子官網(wǎng) 吾愛論文網(wǎng) 大講堂 北京大學(xué) Oxford Uni. Harvard Uni.
發(fā)展歷史沿革 期刊點(diǎn)評 投稿經(jīng)驗(yàn)總結(jié) SCIENCEGARD IMPACTFACTOR 派博系數(shù) 清華大學(xué) Yale Uni. Stanford Uni.
QQ|Archiver|手機(jī)版|小黑屋| 派博傳思國際 ( 京公網(wǎng)安備110108008328) GMT+8, 2025-10-6 20:16
Copyright © 2001-2015 派博傳思   京公網(wǎng)安備110108008328 版權(quán)所有 All rights reserved
快速回復(fù) 返回頂部 返回列表
涪陵区| 汝阳县| 宜城市| 林芝县| 彰化县| 石林| 绥阳县| 高州市| 苏尼特左旗| 肇东市| 惠东县| 拜城县| 天门市| 综艺| 惠东县| 聂拉木县| 三江| 伊川县| 封丘县| 蓝田县| 新绛县| 三亚市| 屯门区| 辽源市| 沈丘县| 会东县| 吴江市| 增城市| 阜新市| 建阳市| 玛曲县| 潜江市| 托克逊县| 万宁市| 榕江县| 抚宁县| 锡林郭勒盟| 普陀区| 永定县| 监利县| 抚顺市|