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Titlebook: Spintronics-based Computing; Weisheng Zhao,Guillaume Prenat Book 2015 Springer International Publishing Switzerland 2015 Emerging Memory.S

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發(fā)表于 2025-3-21 16:23:24 | 只看該作者 |倒序瀏覽 |閱讀模式
書目名稱Spintronics-based Computing
編輯Weisheng Zhao,Guillaume Prenat
視頻videohttp://file.papertrans.cn/875/874446/874446.mp4
概述Provides a panoramic view of spintronics nanodevices-based computing.Presents material at a level accessible to readers without deep background in magnetism and spin electronics.Enables the design of
圖書封面Titlebook: Spintronics-based Computing;  Weisheng Zhao,Guillaume Prenat Book 2015 Springer International Publishing Switzerland 2015 Emerging Memory.S
描述This book provides a comprehensive introduction to spintronics-based computing for the next generation of ultra-low power/highly reliable logic. It will cover aspects from device to system-level, including magnetic memory cells, device modeling, hybrid circuit structure, design methodology, CAD tools, and technological integration methods. This book is accessible to a variety of readers and little or no background in magnetism and spin electronics are required to understand its content. The multidisciplinary team of expert authors from circuits, devices, computer architecture, CAD and system design reveal to readers the potential of spintronics nanodevices to reduce power consumption, improve reliability and enable new functionality.
出版日期Book 2015
關鍵詞Emerging Memory; Semiconductor Spintronics; Spintronics Nanodevices; Spintronics-based Computing; Spintr
版次1
doihttps://doi.org/10.1007/978-3-319-15180-9
isbn_softcover978-3-319-34661-8
isbn_ebook978-3-319-15180-9
copyrightSpringer International Publishing Switzerland 2015
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Current-Induced Magnetic Switching for High-Performance Computing,ith CMOS process. Spin transfer torque (STT), a current-induced switching approach, not only simplifies the switching process but also provides an unprecedented speed and power performances, compared with the field-induced switching. This chapter is dedicated to current-induced switching spintronic
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Challenge of Nonvolatile Logic LSI Using MTJ-Based Logic-in-Memory Architecture,rcome performance wall and power wall due to the present CMOS-only-based logic-LSI processors [1–3]. Figure 1a shows a conventional logic-LSI architecture, where logic and memory modules are separately implemented together and these modules are connected each other through global interconnections. E
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Statistical Reliability/Energy Characterization in STT-RAM Cell Designs,er, the development of STT-RAM is facing two major technical challenges—poor write reliability and high write energy, both of which are severely impacted by process variations and thermal fluctuations. The evaluations on STT-RAM design metrics and robustness often require a hybrid simulation flow, i
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Synchronized Spin Torque Nano-Oscillators: From Theory to Applications,ent research in spin torque nano-oscillators (STNO) has opened the possibility of using electron spin to generate sustained microwave oscillations. Furthermore, the experimental verification of synchronization of STNOs can allow communication and computation with nanoscale oscillators. In this work,
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