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Titlebook: Semiconductors; Data Handbook Otfried Madelung Book 2004Latest edition Springer-Verlag Berlin Heidelberg 2004 Halbleiter.Halbleiterdaten.Se

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樓主: Lensometer
41#
發(fā)表于 2025-3-28 15:43:16 | 只看該作者
42#
發(fā)表于 2025-3-28 22:26:23 | 只看該作者
Book 2004Latest edition but inexpensive collection of at leasl the basic data of their field of interest this volume contains the most important data ofsemiconductors. All data were compiled from infannation on semil:onductors presented on more than 6 000 pages in various volumes oflhe New Series ofLandolt-Bomstein," With
43#
發(fā)表于 2025-3-28 23:18:25 | 只看該作者
III2-VI3 compoundscancies are counted as zero valent atoms. It should however be noted that the trivalent element (Al, Ga, In) is generally overstoichiometric. Thus ordered-vacancy and disordered-vacancy compounds occur.
44#
發(fā)表于 2025-3-29 06:29:51 | 只看該作者
45#
發(fā)表于 2025-3-29 10:06:33 | 只看該作者
Group VI elements are mostly puckered rings with 6, 7, 8, 9, 10, 12, 18 or 20 members. Bond length and bond angles as well as the shortest intermolecular contacts show little variation among the different modifications.
46#
發(fā)表于 2025-3-29 13:14:45 | 只看該作者
IIx-Vy compounds metal sites are vacant. These vacancies lead to a distortion from the ideal cubic symmetry and to a bigger unit cell. The structure consists of alternate layers of Zn/Cd and P atoms, stacked perpendicular to the [001] direction and separated by a distance of about one-eighth of the .-value.
47#
發(fā)表于 2025-3-29 15:36:14 | 只看該作者
48#
發(fā)表于 2025-3-29 23:00:21 | 只看該作者
Group III elementsctures. In the open structures of all the icosahedral boron-rich solids there are voids of sufficient size to accommodate foreign atoms. This interstitial doping is very important to modify the semiconductor properties of these solids. Only the rhombohedral phases of boron show semiconducting properties.
49#
發(fā)表于 2025-3-30 01:38:00 | 只看該作者
Book 2004Latest edition these words the aim of the volume "Semiconductors - Basie Data", published by the present author - was defined in the preface to its first Edition. This edition - published in two volumes in the Series "Data in Science and Technology" - appeared in 1991/92. The 2nd !-::
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發(fā)表于 2025-3-30 05:41:34 | 只看該作者
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