Titlebook: Semiconductor Physical Electronics; Sheng S. Li Book 2006Latest edition Springer-Verlag New York 2006 Diode.bipolar junction transistor.el

Longitude

Excess Carrier Phenomenon in Semiconductors,reated in a semiconductor when photons with energies exceeding the band gap energy of the semiconductor are absorbed. Similarly, minority carrier injection can be achieved by applying a forward bias voltage across a p-n junction diode or a bipolar junction transistor. The inverse process to the gene

endoscopy

休息

Scattering Mechanisms and Carrier Mobilities in Semiconductors,essed in terms of the ratio of the perturbed distribution function (i.e., . – .0) and the relaxation time. This approximation allows one to obtain analytical expressions for different transport coefficients in semiconductors. However, detailed physical insights concerning the collision term and the

GRILL

manifestation

,Metal–Semiconductor Contacts,tor contacts are presented. It is well known that the quality of metal–semiconductor contacts plays an important role in the performance of various semiconductor devices and integrated circuits. For example, good ohmic contacts are essential for achieving excellent performance of a semiconductor dev

MEAN

anniversary

confide

Light-Emitting Devices,a transmission and signal processing, optical storage, sensors and optical imaging, solid-state lamps, and displays. Recent advances in III-V compound semiconductor growth and processing technologies have enabled these applications to become a reality. As a result, various photonic devices such as l

quiet-sleep

COKE

Metal-Oxide-Semiconductor Field-Effect Transistors,ssors and semiconductor memory chips. The present VLSI (very large scale integration) and ULSI (ultra-large-scale integration) digital circuits are based almost entirely on n-channel MOS field-effect transistors (MOSFETs) and complementary MOSFETs (CMOSFETs). The MOS structure is a basic building bl