Titlebook: Semiconductor Interfaces at the Sub-Nanometer Scale; H. W. M. Salemink,M. D. Pashley Book 1993 Kluwer Academic Publishers 1993 Helium-Atom

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Surface Chemistry in the Si/Ge GSMBE system studied using RHEEDlations in both the [001] and [110] azimuths. In this paper I will outline how the RHEED intensity oscillation technique can be used to provide important kinetic data to help in the evaluation of reaction pathways, growth anisotropy and surface segregation effects

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A Lattice Gas Analysis of Binary Alloys on a Tetrahedral Latticelysis with diffusion dynamics is also performed on the same model, simulating the growth of a superlattice. Various rates of deposition at the surface is considered. The structure of the interface corresponding to this growth model is then analyzed

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0168-132X 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the

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Formation Mechanism of CuPt-Type Sublattice Ordering for III-III-V Type Compound Semiconductorsn on (001)GaAs as an illustrative example. The proposed mechanism relies on: (1) a particular reconstruction (‘step-terrace reconstruction (STR)’ model) on vicinal (001) surface with a misorientation towards [111]B direction, (2) a large contraction of P-P distances of P-P dimers, (3) both bond-leng

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