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Titlebook: Science and Technology of Thin Film Superconductors 2; Robert D. McConnell,Rommel Noufi Book 1990 Springer Science+Business Media New York

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樓主: Halcyon
41#
發(fā)表于 2025-3-28 18:27:39 | 只看該作者
Highly-Textured Tl-Ba-Ca-Cu-O Polycrystalline Superconducting Films on Ag Substrateseal in an over pressure of Ti in order to form the superconducting phases. Annealing protocols were done which result in predominantly the 1212 and 2212 phases. The substrate orientation was varied to determine its effect on film orientation. Material properties of the films were characterized by x-
42#
發(fā)表于 2025-3-28 21:39:46 | 只看該作者
43#
發(fā)表于 2025-3-29 02:32:52 | 只看該作者
44#
發(fā)表于 2025-3-29 06:46:18 | 只看該作者
Compositional Modifications in Target and Sputtered Y-Ba-Cu-O Films on Annealingctivity. Annealing cycle plays a dominant role. in determining the quality of the high-T. films. Among many factors which control the quality of the film, the optimum temperature of annealing has been shown to depend on the substrate material.. There are conflicting consideration in deciding the opt
45#
發(fā)表于 2025-3-29 07:43:45 | 只看該作者
Control of Thickness and Composition Uniformity in Sputtered Superconducting Thin Filmsonsiderable thickness and composition non-uniformities are commonly encountered in vacuum deposition on stationary substrates. The thickness uniformity in thin films, prepared by evaporation from point or small area sources, is achieved by choosing large distances from the source to the substrates a
46#
發(fā)表于 2025-3-29 12:12:34 | 只看該作者
47#
發(fā)表于 2025-3-29 16:46:18 | 只看該作者
48#
發(fā)表于 2025-3-29 23:45:17 | 只看該作者
49#
發(fā)表于 2025-3-30 02:08:28 | 只看該作者
Epitaxial Growth of the Gd-Ba-Cu-O Superconducting Thin Films on (100) LaAlO, by Dc-Magnetron Sputingle planar target. The best films had Tco of 92.5K, transition width of 0.57K and critical current density of 3.6x10.A/cm. at 77K with very good reproducibility. The film structure was studied by X-ray spectra in different diffraction geometries. In the Bragg-Brentano (BB) focusing geometry merely
50#
發(fā)表于 2025-3-30 07:50:48 | 只看該作者
In-Situ Growth of Y-Ba-Cu-O Films by High Pressure DC Sputtering–750°C) by the high pressure DC planar diode sputtering process without any further annealing treatment. The sputtering gas was Ar-50%02, and total pressure was 1.5 torr. The target was Y.Ba.Cu.O. compound. The films grown at low substrate temperatures with high discharge current ( ≥ 0.8 A) were con
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