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Titlebook: Risikoverhaltensweisen Jugendlicher; Formen, Erkl?rungen Jürgen Raithel Book 2001 Springer Fachmedien Wiesbaden 2001 Alkohol.Drogen.Empiri

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41#
發(fā)表于 2025-3-28 15:45:27 | 只看該作者
David Le Bretont—as mainly observed by .—also at the boundary between two semiconductors. These zones, the conductivity of which differs from the interior of the semiconductor, are generally situated on both sides of the boundary. Therefore, this layer is called “Doppelrandschicht” (double-barrier layer) in contra
42#
發(fā)表于 2025-3-28 21:55:50 | 只看該作者
43#
發(fā)表于 2025-3-29 00:42:51 | 只看該作者
44#
發(fā)表于 2025-3-29 03:31:53 | 只看該作者
Ulrike Trapp,Monika Neuh?user-Bertholdetween 1 and 10 mc/s, and in particular the alloyed transistor, today everywhere holds the field; higher frequencies up to 500 mc/s are attained with variants of the junction transistor such as the surface-barrier, the tetrode, the pnip, and the diffused transistor. The performance of the transistor
45#
發(fā)表于 2025-3-29 08:30:11 | 只看該作者
46#
發(fā)表于 2025-3-29 12:22:00 | 只看該作者
47#
發(fā)表于 2025-3-29 16:02:35 | 只看該作者
48#
發(fā)表于 2025-3-29 21:18:39 | 只看該作者
Volker Rittneretween 1 and 10 mc/s, and in particular the alloyed transistor, today everywhere holds the field; higher frequencies up to 500 mc/s are attained with variants of the junction transistor such as the surface-barrier, the tetrode, the pnip, and the diffused transistor. The performance of the transistor
49#
發(fā)表于 2025-3-30 02:36:25 | 只看該作者
50#
發(fā)表于 2025-3-30 04:02:39 | 只看該作者
Heidrun Bründeletween 1 and 10 mc/s, and in particular the alloyed transistor, today everywhere holds the field; higher frequencies up to 500 mc/s are attained with variants of the junction transistor such as the surface-barrier, the tetrode, the pnip, and the diffused transistor. The performance of the transistor
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