| 書目名稱 | Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications |
| 編輯 | Jacopo Franco,Ben Kaczer,Guido Groeseneken |
| 視頻video | http://file.papertrans.cn/827/826408/826408.mp4 |
| 概述 | Review of CMOS scaling trends beyond the conventional geometric scaling era, and of advanced NBTI measurement techniques and modeling attempts.Complete reliability study of the novel (Si)Ge channel qu |
| 叢書名稱 | Springer Series in Advanced Microelectronics |
| 圖書封面 |  |
| 描述 | .Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5?, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability..This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated..The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finF |
| 出版日期 | Book 2014 |
| 關鍵詞 | CMOS Technology Nodes; Channel Hot Carriers; Design Optimization; Device Reliability; Electron Device Re |
| 版次 | 1 |
| doi | https://doi.org/10.1007/978-94-007-7663-0 |
| isbn_softcover | 978-94-024-0205-6 |
| isbn_ebook | 978-94-007-7663-0Series ISSN 1437-0387 Series E-ISSN 2197-6643 |
| issn_series | 1437-0387 |
| copyright | Springer Science+Business Media Dordrecht 2014 |
|Archiver|手機版|小黑屋|
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