Titlebook: Reflection High-Energy Electron Diffraction and Reflection Electron Imaging of Surfaces; P. K. Larsen,P. J. Dobson Book 1988 Plenum Press,

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Diffraction from Stepped Surfacesssarily an intermediate state, so that the study of stepped surfaces is needed for a description of any growth or dissolution process. Only with this information other properties like electron mobility due to roughness scattering at surfaces or heterogeneous catalysis due to active sites at steps may be studied in detail.

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Temperature Dependence of the Surface Disorder on Ge(001) Due to Ar+ Ion Bombardmentviz. recoil implantation or ion beam mixing of surface impurities into the topmost atomic layers of the target and creation of radiation damage. The former can be eliminated by prolonged bombardment, the latter which is foremost important with crystalline targets will be the subject of the present paper.

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Inelastic Scattering and Secondary Electron Emission under Resonance Conditions in RHEED from Pt(111d an anomalous enhancement of diffraction intensities from ZnS under certain experimental conditions. Miyake et al. [2] recognized these conditions to be fulfilled whenever a diffracted beam, just before emergence from the crystal, is propagating nearly parallel to the surface. Kohra et al. [3] show

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A Note on the Bloch Wave and Integral Formulations of RHEED Theoryst common are the Bloch wave treatment and the differential or integral operator approach, the latter can be compared with the multi-slice formulation or the Howie-Whelan equations for transmission.[1] In either case the introduction of the backscattered wave may be seen as a crucial step.

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Diffraction from Disordered Surfaces: An Overviewfor investigating the crystallography and microstructure of surfaces and very thin films. Diffraction gives a statistical view of disorder rather than a local picture, as would be obtained, for example, in a scanning tunneling microscope. Many processes occurring at surfaces, such as growth, phase t

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Diffraction from Stepped Surfacesbe varified experimentally or a density of steps has to be indicated. On the other hand the presence and distribution of atomic steps is essential for many changes at surfaces. Both during etching or reaction at surfaces (like oxidation of silicon) and during crystal growth a stepped surface is nece