Titlebook: Reduced Thermal Processing for ULSI; Roland A. Levy Book 1989 Plenum Press, New York 1989 Doping.defects.dielectrics.electronics.epitaxy

催眠藥

corn732

Micrometallization Technologies,lization materials and processes are needed. Specifically, some of the requirements of the materials for ULSI metallization are low resistivity, low contact resistance, fine-line patternability, resistance to electromigration, strong adherence and good step coverage and conformality. Sometimes all o

Gleason-score

Multilevel Interconnect Structures,l interconnect with regard to density, number of levels, and processing problems; to estimate future needs for multilevel interconnect and consider some possible new ways to achieve these goals. First, to establish some assumptions, Figure 1 shows an interesting relationship with regard to capacitan

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異常

Cognizance

Interlevel Dielectrics for Reduced Thermal Processing,ird dimension is now actively used by extending the storage capacitor into the substrate /3/. Figure 2 shows a cross-section through the cell array of the Siemens 4Mbit-DRAM. These tendencies in chip development, which are now a common feature of DRAM-cell concepts /4/, have several technological consequences of conflicting nature:

慟哭

Introduction to Direct Writing of Integrated Circuit,itable for either development of prototype circuits or filling low-volume custom orders of integrated circuits. It appears to be the most practical near-term application of this technology. Another application of the laser direct writing technique is the discretionary fabrication of high performance devices.

Inertia

HATCH

Book 1989l budget for processing such devices. Furthermore, due to the relatively low melting point of the first aluminum metallization level, such restrictions extend to the fabrication of multilevel structures that are now essential in increasing packing density of interconnect lines. The fabrication of ul

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