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Titlebook: Recent Advances in Technology Research and Education; Selected Papers of t Yukinori Ono,Jun Kondoh Conference proceedings 2024 The Editor(s

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樓主: False-Negative
21#
發(fā)表于 2025-3-25 06:39:36 | 只看該作者
Fabrication and Characterization of Silicon Tunnel Diodes Doped by Short-Time Rapid Thermal Annealing speed than silicon (Si) metal-oxide-semiconductor field-effect transistors (MOSFETs). To investigate the BTBT mechanism in Si nanodevices, we fabricated and characterized nanoscale tunnel (Esaki) diodes based on silicon-on-insulator (SOI) substrates. Characteristics of Esaki diodes were observed i
22#
發(fā)表于 2025-3-25 09:30:08 | 只看該作者
Interaction of Low Voltage Microplasma Discharge with Stratum Corneum searching a new method able to deliver drugs transdermal pathway. One of such methods is treatment of the skin by device producing plasma affecting barrier function of the skin. In our study, permeability of sodium fluorescein through the most upper part of the skin, stratum corneum was demonstrate
23#
發(fā)表于 2025-3-25 14:47:43 | 只看該作者
Brain-Drug Delivery Through Intercellular Junction of Blood Brain Barrier (BBB) Using Cold Atmosphere. g. tight junction) of blood brain barrier (BBB) using cold atmospheric plasma (CAP). The CAP produces reactive oxygen and nitrogen species (RONS) that include hydroxyl (HO.), superoxide (O.), peroxyl (ROO.), nitric oxide (NO.), ozone (O.), hydrogen peroxide (H.O.), and singlet oxygen (.O.). In th
24#
發(fā)表于 2025-3-25 18:48:45 | 只看該作者
25#
發(fā)表于 2025-3-25 22:29:13 | 只看該作者
26#
發(fā)表于 2025-3-26 01:42:52 | 只看該作者
27#
發(fā)表于 2025-3-26 07:26:09 | 只看該作者
28#
發(fā)表于 2025-3-26 10:18:07 | 只看該作者
29#
發(fā)表于 2025-3-26 13:53:35 | 只看該作者
30#
發(fā)表于 2025-3-26 20:29:18 | 只看該作者
Analysis of the Resistance of Silicon Nanoscale Structures Highly Doped in Different Configurations. On the other hand, devices with the nano-channels codoped with both P-donors and boron (B) acceptors exhibit Coulomb blockade features with high yield. These results can lead to further studies towards single-charge tunneling in silicon nano-transistors in which both donors and acceptors interplay in the formation of quantum dots (QDs).
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